1) semiconductor quantum well structure
半寻体量子阱结构
2) quantum well structures
量子阱结构
1.
56)/InP quantum well structures was calculated by using 4×4 Luttinger-Kohn Hamiltonian matrix under effective mass frame.
56 /InP量子阱结构进行了能带计算 ,求得了该量子阱结构跃迁能量随组份及阱宽的变化关系 ,从而得到了激射波长 1。
3) quantum well structure
量子阱结构
1.
The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.
利用分子束外延生长法生长出了ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制单量子阱结构材料。
2.
Its self-assembling quantum well structures of.
其结构特征是形成了无机半导体层和有机层交替堆积的量子阱结构,从而具有较大的激子结合能和优异的光、电、磁性能,显示出广阔的应用前景;同时,对该类材料的研究,必将推动半导体材料理论的发展,引起科学界的广泛关注。
4) quantum-well structure
量子阱结构
1.
The development of the organic quantum-well structure devices was introduced systemically.
制备了普通的有机量子阱结构 ,并对结构进行了表征。
5) photonic quantum-well structures
光子晶体量子阱结构
1.
In this thesis, from the view of application, we study the properties of the tunable photonic crystals, polarization-independent photonic crystals and the photonic quantum-well structures containing negative-index materials.
本论文从光子晶体的应用角度出发，研究了可调光子晶体的性质，偏振无关光子晶体的性质和含有负折射率材料光子晶体量子阱结构的性质。
6) semiconductor quantum structure
半导体量子结构
1.
The important developments in electronic structure theory of semiconductor quantum structure and its application for designing Si based optoelectronic materials are reviewed.
评述近年来在半导体量子结构电子态理论应用于 Si基光电子材料设计方面的重要进展 。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条