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1)  proper morphism
真射
2)  Vacuum sputtering
真空溅射
1.
The Cr-Cu/ Al 2O 3/ZnS /Ag films grown on glass substrate by the way of vacuum sputtering, the fabrication technology on electron emission properties are studied, and the optimum technical parameter is obtained.
介绍了一种用于场致发射显示的平面多层膜电子发射结构的制作过程 ,采用真空溅射的方法镀制玻璃衬底 Cr-Cu Al2 O3 ZnS Ag结构的平面电子源 ,对其发射性能进行了论述 ,并取得优化发射性能的工艺参
3)  vacuum sputter
真空溅射
1.
In this paper, with the technology of vacuum sputter, pure aluminum corrosion sensitive film was directly deposited on the core of optical fiber with its clad removed.
用清水反复清洗浸蚀后的光纤,晾干后进行真空溅射镀膜。
2.
The technics of fabricating pure Al corrosion sensing film with vacuum sputter were groped.
探索了利用真空溅射技术在光纤纤芯上沉积纯铝腐蚀敏感膜的工艺。
4)  projective distortion
射影失真
1.
A Pratical Method of Removing the Projective Distortion;
一种消除图像射影失真的实用方法
2.
The reason for Projective distortion that the amplification ratio is not constant but has nonlinear relation with pitch and tilt angles and field of view of cameras was found out.
通过分析该模型中物与像的对应关系,得出了射影失真产生的根源是光学系统放大率的不恒定,并与相机的外参数:倾角及视场的大小有着非线性的变化关系。
5)  RF simulation
射频仿真
1.
In this paper,a realization scheme for RF simulation of the target signal in a frequency agile radar is discussed.
介绍了一种用于非相参捷变频体制导弹末制导雷达目标信号射频仿真的模拟器。
2.
We made the research on the errors, which provided important reference to error analysis of RF simulation system.
详细分析了二元阵定向原理 ,推导出定向公式 ,对原理误差进行了研究 ,为射频仿真系统误差分析提供了重要的依据。
3.
A near-distance target was simulated by RF simulation technology,in which the fuze\'s emission signal is delayed with fiber-delay-line for whole coding period.
并用射频仿真方法模拟近距离目标,其中采用光纤延迟线将引信信号延时一个编码周期实现零距离延迟,验证引信真实灵敏度特性,最后给出了结论。
6)  firing simulation
射击仿真
1.
Comparing the data between firing simulation and the calculation specification of recoil system,the results show that the virtual prototype is practical and it is a feasible approach to the dynamic analysis through the virtual prototype.
利用fortran语言将内弹道计算的发射时火药气体压力以及复进机、驻退机力编为外挂程序模块施加于模型,然后将射击仿真时的后坐运动与反后坐说明书的数据进行对比,结果证明该虚拟样机与火炮射击后坐的运动情况基本一致,符合工程分析的要求。
补充资料:磁控溅射
分子式:
CAS号:

性质:用一个环形永久磁体在乎板形靶上产生环形磁场,在磁场作用下,电子被约束在一个环状空间内,形成高密度的等离子环。在等离子环内,电子不断地使Ar原子变成Ar离子,Ar离子被加速后打向靶表面,把靶内的原子溅射出来,沉积在基片上形成薄膜。若靶材为导体,溅射电源可用直流或射频电源,如靶材是绝缘体,则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上,称为正轴溅射,基片放在靶轴线外;称为偏轴溅射。磁控溅射是广泛采用的制膜方法。

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