1) ion etching equipment
离子刻蚀设备
2) Plasma etching apparatus
等离子刻蚀设备
3) etching equipment
刻蚀设备
1.
Now etching has be-come the standard technology,and etching equipment is the key equipment in IC production.
目前,刻蚀技术已经成为集成电路生产中的标准技术,干法刻蚀设备亦成为关键设备。
4) Etch Equipment
蚀刻设备
5) ion etching
离子刻蚀
1.
The distribution of C, O, N, Cl elements in ternary polyurethane/epoxy/poly-B-propylene glycol diacrylate(PUR/EP/PPGDA) IPNs' surface was analyzed by X-ray photoelectron spectroscopy and the internality was analyzed with argon ion etching.
用X射线光电子能谱(XPS)分析了以聚氨酯(PUR)为第一网络的PUR/环氧树酯/聚-β-丙二醇二丙烯酸酯互穿聚合物网络(PUD/EP/PPGDA IPN)弹性体的表面元素分布,并用氩离子刻蚀进行材料内部元素分析。
2.
In order to make high quality junctions we have done some researches on reaction ion etching(RIE) method and ion etching method.
在制备所有的NbN超导隧道结的过程中,为了得到良好的隧道结,刻蚀是很关键的一步,我们对反应离子刻蚀(RIE)和离子刻蚀两种不同的方法进行了研究比较。
3.
This paper applies the thermal spikes effect and ion etching effect to explain the formation of DLC films by analyzing the effects of energy particles.
本文通过分析荷能离子的作用，应用热峰效应和离子刻蚀效应来解释ＤＬＣ膜的形
6) Ion etching
离子蚀刻
1.
The speed of etching the sample was determined by controling the size ofion beam and voltage of two pole of ion beam,By the technigue of ion etching,themicroshape of the mite leg and the mite boby of the Tetranychus truncatus Ehara wasclearly displayed under Scaning Electronic Microscope(SEM).
本文以截形叶螨为实验样品，经离子蚀刻后在扫描电镜下观察，清晰地显示了螨足、螨体解剖后的显微结构。
补充资料：小刻
1.古代的计时单位。分一昼夜为一百刻﹐每刻六十分﹐一百刻共六千分。秦汉以后﹐又分一昼夜为十二时﹐则每时为五百分﹐亦即八刻零二十分。将八刻命名为初一﹑初二﹑初三﹑初四﹐正一﹑正二﹑正三﹑正四﹐这是大刻。再将零数二十分﹐分为二小刻﹐每小刻各十分﹐命名为初初﹑正初﹐分别置于初一﹑正一之上。参阅清顾炎武《日知录·百刻》。 2.木板上雕成的小缺口。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条