1) hot carrier effect
热载流效应
2) hot carrier effect
热载流子效应
1.
The simulation and analysis of hot carrier effect in LDD MOS;
LDD MOS器件模拟及热载流子效应分析
2.
Hot Carrier Effect of NMOSFET with Different Gate Oxide Thickness;
不同栅氧厚度NMOS管的热载流子效应
3.
Low temperature hot carrier effects of N 2O nitrided (N 2ON) n MOSFET’s are investigated under the stresses of both maximum substrate current ( I B max ) and gate current ( I G max ) as compared to those of thermal oxidized (OX) n MOSFET’s.
通过与热氧化ｎ－ＭＯＳＦＥＴ’ｓ 比较，调查了Ｎ２ Ｏ氮化 （Ｎ２ＯＮ） ｎ－ＭＯＳＦＥＴ’ｓ 在最大衬底电流ＩＢ ｍ ａｘ和最大栅电流ＩＧ ｍ ａｘ 应力下的低温热载流子效应。
3) hot-carrier effect
热载流子效应
1.
The failure experiments of the P-LDMOS (lateral double diffused metal oxide semiconductor) demonstrate that the high peak electrical fields in the channel region of high-voltage P-LDMOS will reinforce the hot-carrier effect,which can greatly reduce the reliability of the P-LDMOS.
高压P-LDMOS的失效实验分析表明其沟道区的高峰值电场会导致沟道区的热载流子效应,从而将降低高压P-LDMOS的可靠性。
2.
The hot-carrier effect becomes to have a significant impact on the MOSFETs with size in deep sub-micron and ultra-deep sub-micron region.
本文通过理论分析和计算机数值模拟围绕深亚、超深亚微米nMOSFET器件热载流子产生机理,热载流子引起的器件特性退化等问题,对小尺度nMOSFET的热载流子效应进行了系统的研究。
3.
Hot-carrier effec
论文主要研究了双轴应变硅CMOS器件的自热效应和热载流子效应。
4) hot-carrier effects
热载流子效应
1.
Finally, based on the devicestructures and operaton conditions, design considerations are proposed to supress low-temperature hot-carrier effects.
本文简要研究了这种效应，包括低温热载流子的行为和界面态的产生及其对器件特性蜕变的影响，最后，从器件结构和工作条件等方面提出了抑制低温热载流子效应的设计考虑。
2.
SOI groove gate MOS devices, which constrain the Short-channel effects and resist the Hot-carrier effects effectively in Sub-micron field, compensate the defect of bad driving capability and sub-threshold characteristics in Bulk Groove gate devices.
SOI技术和槽栅MOS新器件结构是在改善器件特性方面的两大突破,SOI槽栅MOS器件结构能够弥补体硅槽栅MOS器件在驱动能力和亚阈值特性方面的不足,同时也保证了在深亚微米领域的抑制短沟道效应和抗热载流子效应的能力。
3.
The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.
对深亚微米器件中热载流子效应 (HCE)进行了研究 。
5) hot-carrier-effect
热载流子效应
1.
Influence of hot-carrier-effect on degradation characteristics of different channel length n-MOSFETs have been investigated.
研究热载流子效应对不同的沟道长度n-MOSFETs退化特性的影响。
2.
The influence of structure on hot-carrier-effect immunity for deep-sub-micron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) is studied using two-dimensional device simulator Medici and compared to that of counterpart conventional planar devices.
结果表明即使在深亚微米范围 ,槽栅器件也能很好地抑制热载流子效应 ,且其抗热载流子特性受凹槽拐角和沟道长度的影响较显著 ,同时对所得结果从内部物理机制上进行了分析解
6) HCE
热载流子效应
1.
Optimized Design of HCE Degradation Induced by Tilt of Halo;
Halo注入角度对热载流子效应的影响及优化
2.
Hot-Carrier Effect (HCE) is relevant to device parameter and circuit topology.
介绍了热载流子效应与电路拓扑结构及器件参数之间的关系,并在此基础上提出了基本逻辑门的一些抗热载流子加固方法。
补充资料：三藏菩提流志《佛祖历代通载》
【三藏菩提流志《佛祖历代通载》】
三藏菩提流志。春秋一百五十有六。流志南印土国王之子。以让位出家。高宗闻名有诏要之。以垂拱中至京师。凡四十年。如华严宝积经等。皆出其手。帝及重臣敬之如生佛。葬日特给卤簿羽仪。塔于龙门之西原。赐谥曰开元一切遍知三藏。名德之盛古未有焉
三藏菩提流志。春秋一百五十有六。流志南印土国王之子。以让位出家。高宗闻名有诏要之。以垂拱中至京师。凡四十年。如华严宝积经等。皆出其手。帝及重臣敬之如生佛。葬日特给卤簿羽仪。塔于龙门之西原。赐谥曰开元一切遍知三藏。名德之盛古未有焉
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条