1) carrier freeze-out effect
载流子冻析效应
2) carrier effects
载流子效应
1.
The influence of the carrier effects on the temperature rise and melt threshold, the distributions of temperature and carrier concentration in the targets are also discussed.
采用数值方法 ,研究了半导体 In Sb材料受连续波激光辐照的熔融阈值 ,讨论了 In Sb材料的熔融阈值与入射激光波长、功率密度以及辐照时间的关系 ,同时考虑了载流子效应对靶内温升过程以及熔融阈值的影响 ,给出了材料内温度与载流子密度的瞬态分
3) freeze-out effect
冻析效应
4) hot carrier effect
热载流子效应
1.
The simulation and analysis of hot carrier effect in LDD MOS;
LDD MOS器件模拟及热载流子效应分析
2.
Hot Carrier Effect of NMOSFET with Different Gate Oxide Thickness;
不同栅氧厚度NMOS管的热载流子效应
3.
Low temperature hot carrier effects of N 2O nitrided (N 2ON) n MOSFET’s are investigated under the stresses of both maximum substrate current ( I B max ) and gate current ( I G max ) as compared to those of thermal oxidized (OX) n MOSFET’s.
通过与热氧化ｎ－ＭＯＳＦＥＴ’ｓ 比较，调查了Ｎ２ Ｏ氮化 （Ｎ２ＯＮ） ｎ－ＭＯＳＦＥＴ’ｓ 在最大衬底电流ＩＢ ｍ ａｘ和最大栅电流ＩＧ ｍ ａｘ 应力下的低温热载流子效应。
5) hot-carrier effect
热载流子效应
1.
The failure experiments of the P-LDMOS (lateral double diffused metal oxide semiconductor) demonstrate that the high peak electrical fields in the channel region of high-voltage P-LDMOS will reinforce the hot-carrier effect,which can greatly reduce the reliability of the P-LDMOS.
高压P-LDMOS的失效实验分析表明其沟道区的高峰值电场会导致沟道区的热载流子效应,从而将降低高压P-LDMOS的可靠性。
2.
The hot-carrier effect becomes to have a significant impact on the MOSFETs with size in deep sub-micron and ultra-deep sub-micron region.
本文通过理论分析和计算机数值模拟围绕深亚、超深亚微米nMOSFET器件热载流子产生机理,热载流子引起的器件特性退化等问题,对小尺度nMOSFET的热载流子效应进行了系统的研究。
3.
Hot-carrier effec
论文主要研究了双轴应变硅CMOS器件的自热效应和热载流子效应。
6) hot-carrier effects
热载流子效应
1.
Finally, based on the devicestructures and operaton conditions, design considerations are proposed to supress low-temperature hot-carrier effects.
本文简要研究了这种效应，包括低温热载流子的行为和界面态的产生及其对器件特性蜕变的影响，最后，从器件结构和工作条件等方面提出了抑制低温热载流子效应的设计考虑。
2.
SOI groove gate MOS devices, which constrain the Short-channel effects and resist the Hot-carrier effects effectively in Sub-micron field, compensate the defect of bad driving capability and sub-threshold characteristics in Bulk Groove gate devices.
SOI技术和槽栅MOS新器件结构是在改善器件特性方面的两大突破,SOI槽栅MOS器件结构能够弥补体硅槽栅MOS器件在驱动能力和亚阈值特性方面的不足,同时也保证了在深亚微米领域的抑制短沟道效应和抗热载流子效应的能力。
3.
The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.
对深亚微米器件中热载流子效应 (HCE)进行了研究 。
补充资料：析析
1.亦作"??3B4A"。 2.象声词。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条