1) hall mobility
霍耳迁移率<电信>
2) electron Hall mobility
电子霍耳迁移率
1.
Analytical model for the electron Hall mobility in the n-type 4H-SiC;
n型4H-SiC电子霍耳迁移率解析模型
2.
With analysis of conduction band structure and isotropic relaxation time approximation,an analytical model for the electron Hall mobility and Hall scattering factor of n-type 6H-SiC is proposed.
基于对自身能带结构的分析以及各向同性弛豫时间近似法,采用三椭球等能面、抛物线性简化,建立了适于模拟n型6H-SiC电子霍耳迁移率和霍耳散射因子的解析模型,精确描述了不同散射机制对于6H-SiC低场电子输运特性的影响。
3) Hall mobility
霍耳迁移率
1.
In this paper, we present a Hall mobility calculation by hydrodynamic balance equations at temperature from 30 K to 1 000 K.
采用流体动力学平衡方程在温度为３０ Ｋ 到１０００ Ｋ 范围内计算了霍耳迁移率，并用补偿模式研究了载流子密度与温度的关系。
2.
The numerical solutions demonstrate a striking sudden change of the Hall mobility.
通过数值求解，得到不同磁感应强度下波矢空间的稳定唯一周期解或稳定焦点不动解，并进一步给出了霍耳迁移率随磁感应强度的演变行为和突变现象。
4) Hall mobility
霍尔迁移率
1.
The ZAO film suitable for thin film solar cells were obtained,whose thickness,resistivity,carrier concentration and Hall mobility are 700?nm,4.
98×1020cm-3,霍尔迁移率61。
2.
Results showed that values of resistivity and Hall coefficient of the wafers before etching are lower than those after etching, while Hall mobility and carrier density were higher.
结果发现:与化学抛光后所测值相比,抛光前所测得的电阻率和霍尔系数值相对较小,而霍尔迁移率和载流子浓度相对较大,其中电阻率和霍尔迁移率在化学抛光前后变化幅度分别高达25%和31%,而霍尔系数和载流子浓度的变化幅度只有2%左右。
5) hall constant
霍耳常数<电信>
6) hall effect
霍耳效应<电信>
补充资料：国际电信联盟标准(见国际电信联盟)
国际电信联盟标准(见国际电信联盟)
standards of ITU: see International Telecommunication Union; ITU
切网1 Ulan欠jnL心n厅泊ngb泊。zhun国际电伯联盟标准(，tan由Ids际电信联盈。of TYLJ)见国
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条