1) electronegative impurity
负电性杂质
2) impurity conductivity
杂质导电性
3) electropositive impurity
正电性杂质<冶>
5) impurity conduction
杂质导电
6) ionization of dopant
杂质电离
1.
In SiC,the relations between the influence of valley-orbit splitting on ionization of dopant and doping concentration,temperature and the depth of dopant energy level were investigated systematically through theoretical computation.
对SiC中基态施主能级分裂对杂质电离的影响,与温度、掺杂浓度和杂质能级深度的关系进行了系统研究。
补充资料：负电性
分子式：
CAS号：
性质：见电负性
CAS号：
性质：见电负性
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条