1) charged defects
带电缺陷
2) imperfect tape
缺陷磁带，缺陷带
3) defect band
缺陷带
1.
The result indicates that the defect band is only in the range of-45°<θ<45° and its position changes with the rotational angle when f=0.
5旋转散射柱时,缺陷带只出现在-45°<θ<45°范围内,且位置随旋转角变化;带隙中缺陷带的数量随fd的增加而减少,当fd很小时,异质线缺陷的旋转对声波导没有影响;缺陷态的模场分布取决于它在带隙中的位置和距带隙上下边带间的距离。
2.
The result indicates that the defect band is only in the range of-45°<θ<45°,whose distribution is symmetric to the direction of(0,1),and that its number and position changes wi.
5,旋转散射柱时,缺陷带出现在-45°＜θ＜45°范围内,数量、位置随旋转角变化,且缺陷带的分布关于(01)方向对称；对于给定的 f=0。
5) defects of teaching
带教缺陷
6) defected microstrip
缺陷微带
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条