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1)  edge absorption
边吸收
2)  Absorption edge
吸收边
1.
It is observed that the absorption edge of the CdS/SiO2 shifts in comparison with that of the bulk CdS as the annealing temperature change as well as the loading of CdS in SiO2.
 本文作者通过溶胶-凝胶法获得块材CdS纳米颗粒/介孔SiO2组装体系(CdS/SiO2)块体样品,室温下的拉曼谱中观察到CdS的两个特征峰;在氮气和空气气氛中退火处理后,发现吸收边位置随复合量和退火温度不同而移动。
2.
It is observed that the absorption edge of the ZnS/SiO_2 shifts in comparison with that of the bulk ZnS as the annealing temperature change as well as the loading of ZnS in SiO_2.
通过溶胶-凝胶法获得块材ZnS纳米颗粒/介孔SiO2组装体系(ZnS/SiO2)样品,分别在氮气和空气气氛中做了退火处理,发现吸收边位置随复合量和退火温度不同而移动。
3.
However, the absorption edge of Zn∶LiNbO 3is blue-shifted with increasing Zn dopant.
Zn:Li Nb O3 晶体的吸收边发生紫移。
3)  band-edge of optical absorption
吸收带边
1.
UV-VIS absorption spectrum and its derivative of absorption spectrum were used to detemine the shift of band-edge of optical absorption and band gap value along with the variation of temperature.
用紫外 可见光谱和导数吸收光谱研究了纳米TiO2 的吸收带边、能隙随着煅烧温度变化而变化的情况 ,结合XRD、TG DSC分析了不同温度下TiO2 的晶型及晶型转变情况。
4)  absorbing boundary
吸收边界
1.
3-D wave equation prestack numerical simulation using the absorbing boundary condition that needs weighting-directional correction and interpolation prediction;
加权方向校正及插值预测吸收边界条件的三维波动方程叠前数值模拟
2.
Numerical reflection analysis of PML absorbing boundary in 3-D GA-A~3DI-FDTD method;
GA-A~3DI-FDTD的PML吸收边界数值反射分析
3.
Study on Absorbing boundary condition in parallel FDTD algorithm;
时域有限差分并行算法中的吸收边界研究
5)  absorption edge
吸收边缘
1.
We present an investigation on the optical properties as well as absorption edge of TiO 2 thin films deposited on silica glass by the sol-gel process.
采用溶胶 -凝胶方法在二氧化硅玻璃基片上制备了TiO2 薄膜 ,通过测量薄膜在紫外 -可见光波段的透射率和反射率光谱 ,对其光学特性和吸收边缘进行了研究 。
2.
The core_shell absorption edge of sapphire is studied by using the electron energy loss microspectroscopy.
利用电子能量损失光谱学研究了蓝宝石核心壳层吸收边缘。
6)  optical absorption edge
光吸收边
1.
The transmission spectra and optical absorption edges (OAEs) of some scheelite structured crystals, such as undoped CaWO 4, PbWO 4, CaMoO 4 and PbMoO 4 crystals, were comparatively studied.
比较了一些白钨矿结构的钨、钼酸盐晶体(如未掺杂的CaWO4、PbWO4、CaMoO4、Pb-MoO4晶体)的透射光谱,发现这些晶体的光吸收边的相对位置用普遍认同的观点,即白钨矿结构的钨、钼酸盐晶体的光吸收边起源于具有Td对称性的W(Mo)O2-4基团内的电子从t1轨道向2e轨道的转移激发,不能给出圆满阐释,而应代之以新的观点。
补充资料:吸收边
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性质:又称吸收边。入射X射线照射某元素时,随着波长的改变,质量衰减系数增加;当波长调至某一数值时,质量衰减系数发生突变。某元素的质量衰减系数发生突变时的波长值,称为某元素的吸收限。因入射X射线光子能量(与波长有关)恰好能激发某元素原子能级时,X射线能量被大量吸收,产生吸收突变,故称吸收限。

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