1) Back-Pushing Effect
推背效应
2) backside effect
背面效应
1.
This paper presents an important characteristic for the bistatic radar clutter spectrum,which is named backside effect.
本文发现了双基地杂波谱的一个重要特征———背面效应(Backside effect)。
3) back-gate effect
背栅效应
1.
Thesimulator, considering the special structure of SOI devices, studies the influencesof recombination-generation rate on parameters of internal devices and analyzesthe back-gate effect and the principle of Kink effect of Ⅰ-Ⅴ characteristics.
这个模型从SOI器件的特殊结构出发,着重考虑了复合-产出率对器件内部参数的影响,分析了SOI-MOSFET器件的背栅效应以及I-V特性的扭曲(Kink)效应产生的机理。
2.
The back-gate effects on front-channel subthreshold characteristics,on-r esistance,and off-state breakdown characteristics of these devices are studied in detail.
相比于源体紧密接触结构,低势垒体接触结构横向双扩散功率晶体管的背栅效应更小,这是因为低势垒体接触结构更好地抑制了浮体效应和背栅沟道开启。
4) back and face effect
正背效应
5) back stress effect
背应力效应
6) push-pull effect
推拉效应
1.
Objective To assess push-pull effect(PPE)on detailed cardiac pump function responses with a tilt table.
目的利用旋转床模拟推拉效应(PPE)的方法观察人体心脏泵血功能相关指标的变化,对推拉效应发生的可能机理进行深入探讨。
2.
Method Exposures to HUT/LBNP (-60 mmHg) in control session (without preceding 30 s -1 Gz treatment) and in simulated push-pull effect (PPE) session (with preceding 30 s -1 Gz treatment) were performed in 8 healthy adults.
方法8名被试者在下体负压倾斜床上进行“直立位-倒立位30s-直立位联合下体负压(-60mmHg)致晕厥前症状”的模拟推拉效应试验及单纯直立位+下体负压(-60mmHg)致晕厥前症状的对照试验,用阻抗法测量了试验过程中心血管功能指标的变化。
3.
AIM : To observe cardiovascular responses t o head-up tilt (HUT) with lower body negative pressure (LBNP) following exposure t o head-down tilt (HDT) and to evaluate the effect of push-pull effect (PPE) simu lated by LBNP tilt-table.
目的 :观察倒立位暴露后头高位倾斜联合 - 9 33kPa的下体负压对心血管功能的影响 ,进一步探讨下体负压倾斜床模拟航空推拉效应的效果 。
补充资料：推背图
1.图谶之书。《宋史．艺文志五》着录有《推背图》一卷，不着撰人。相传为唐李淳风﹑袁天纲合作，每图附诗一首，预言历代兴亡变乱之事，至六十图，袁推李背止之，故名。其诗句多模棱两可，便于附会。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条