1) SiC/Si composite
SiC/Si材料
2) Si contained Al_2O_3-SiC composites
Si复合Al_2O_3-SiC材料
3) 2D Cf/SiC-Si composites
2D Cf/SiC-Si复合材料
1.
Based on the high temperature and short-term oxidation environments,2D Cf/SiC-Si composites were prepared by precursor infiltration and pyrolysis.
针对短时高温抗氧化的具体环境,采用先驱体转化工艺制备2D Cf/SiC-Si复合材料。
4) Mo(Si,Al)2-SiC
Mo(Si,Al)2-SiC复合材料
5) SiC material
SiC材料
1.
An review of research status,key technologies and developing trends on SiC material and devices are integrated introduced in this paper.
综述了SiC材料及器件的研究现状、关键技术和发展趋势;分析了我国的研究现状和存在的差距。
6) SiC
SiC材料
1.
SiC, as a significant "third generation" material, gets highly attention in the "extreme electronics" study, because of the excellent performance under high temperature, high power and high radiation condition.
SiC材料是第三代宽禁带半导体材料的代表,因其在高温、高功率、高辐射条件下的优异性能,而成为“极端电子学”中最重要的研究对象之一;同时SiC材料又是除了Si材料之外唯一能够通过直接热氧化生长氧化绝缘膜的半导体材料。
补充资料:无晶界玻璃相的无压烧结Si_(3)N_(4)材料
无晶界玻璃相的无压烧结Si_(3)N_(4)材料
翼 无晶界玻璃相的无几烧结siN材料
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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