1) Ge monocrystal
Ge单晶
2) Ge nanocrystals
Ge纳米晶
1.
Ge nanocrystals embedded in SiO2 thin films have been prepared by RF co-sputtering technique and post-annealing treatment.
用射频共溅射技术和后退火的方法,制备出埋入SiO2基质中的Ge纳米晶复合膜(ncGe/SiO2)。
2.
Ge nanocrystals embedded in SiO\-2 gel\|glasses were prepared by a sol\|gel method.
以 3-三氯锗丙酸和正硅酸乙酯为原料 ,通过水解、缩聚凝胶热处理及氢气反应 ,在 Si O2 凝胶玻璃中析出立方相 Ge纳米晶 ,当 x=30时 ,凝胶玻璃中除了析出立方相 Ge纳米晶外 ,还析出六方相 Ge O2 。
3.
The formation mechanism of Ge nanocrystals (nc-Ge) embedded in a SiO_2 amorphous film is studied.
研究了单束双能高剂量Ge离子注入、不经过退火在非晶态SiO2薄膜中直接形成镶嵌结构Ge纳米晶的物理机制。
3) Ge nanocrystal
Ge纳米晶
1.
Local structure of Ge nanocrystals embedded in SiO_2 studied by Fluorescence EXAFS technique;
荧光EXAFS研究镶嵌在SiO_2中的Ge纳米晶的局域结构
2.
Ge nanocrystal memory device can be programmed at a relatively low voltage and high speed.
Ge纳米晶嵌入高k介质中既可以提高器件的可靠性又可以降低写入电压和提高存储速度。
4) Ge crystal
晶体Ge
1.
One-dimensional dynamic semiconductor model was presented for the laser ablation of Ge crystal in a background gas (He) at 133320 Pa and the characteristics of plasma induced by Gaussian-shaped KrF laser pulse with wavelength of 248nm, pulse width of 17ns, and peak power of w/cm2.
32pa)氦气环境下烧蚀晶体Ge及产生等离子体的过程进行了数值模拟,并对计算结果进行分析比较。
5) nanocrystalline Ge
Ge纳米晶
1.
Study of Nanocrystalline Ge Preparation and Neutron Transmutation Doping;
Ge纳米晶制备及中子嬗变掺杂的研究
2.
The novel phenomena of the nanocrystalline Ge (nc-Ge) directly prepared with high dose Ge ion implantation of 1×10 16 ,1×10 17 ,5×10 17 ,and 1×10 18 cm -2 respectively and without the subsequent annealing are presented.
报道了分别采用剂量为 1× 1 0 1 6 ,1× 1 0 1 7,5× 1 0 1 7和 1× 1 0 1 8cm- 2的高剂量 Ge离子注入 ,不需退火即可在 Si O2中直接形成 Ge纳米晶的新现象 。
6) germaium(Ge) crystal
锗(Ge)晶体
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条