1) metallic ferromagnetic thin films
金属磁性薄膜
2) metallic thin film/non-magnetism
金属薄膜非磁性
3) metal film magnetoresistance
金属薄膜磁电阻
1.
A metal film magnetoresistance transducer was used to detect the distributing magnetic field of the drum surface and the signal was transformed to an oscil.
采用金属薄膜磁电阻传感探头检测磁鼓表面分布磁场,信号通过电路放大、整形后接入示波器和计数器,结果显示输出信号波形良好,计数完整。
4) Ferromagnetic metal film
铁磁金属薄膜
5) magnetic metallic-insulator granular thin films
磁性金属-绝缘体颗粒薄膜
6) metallic film
金属薄膜
1.
The adhesion property of Au/NiCr/Ta multi-layered metallic films was investigated by the indentation method,rolling contact fatigue method and scratch method with both friction and acoustic emission modes.
针对Al2O3基体上磁控溅射沉积的Au/NiCr/Ta多层金属薄膜,用压痕法、滚动接触疲劳法、摩擦力和声发射两种模式同时监测的划痕法,对比研究了金属薄膜与基体的结合性能。
2.
Au/NiCr/Ta and Au/NiCr metallic multilayers were deposited on A1203 substrate by magnetron sputtering and their critical load (La) was studied by scratch method with friction and acoustic emission mode, moreover, the scratch curve and morphology of metallic films were compared with TiN film.
采用摩擦力和声发射两种模式同时监测的划痕法研究了 Au/NiCr/Ta和 An/NiCr多层金属薄膜的临界载荷 Lc,并与TiN硬质薄膜进行了对比。
3.
The relationship between resistivity of metallic film and its surface roughness, residual stress was investigated according to experimental results.
针对磁控溅射Au金属薄膜,从实验角度研究了该薄膜电阻率与表面粗糙度、残余应力的关系,并对结果进行了分析。
补充资料:磁性材料2.薄膜磁性材料
磁性材料2.薄膜磁性材料
Magnetie Materials 2.Thin Film
在一定外加磁场作用下,其反磁化畴(磁矩取向与外磁场方向相反的畴)变为圆柱形磁畴。从膜面上看,这些柱形畴好像浮着的一群圆泡,故称磁泡或叫泡踌(另见磁性材料2.昨晶态磁性材料)。在特定的电路图形、电流方向和一定磁场情况下,可做到控制材料中磁泡的产生、传翰和消失,实现信息的储存和逻辑运算的功能。磁泡的直径在微米量级(0 .5~5协m),每个磁泡的迁移率在1 .26~12.6em八s·A/m)〔 102一i03cm八s·oe)〕,因而可制成存储密度为兆位/cmZ(Mbit/cmZ)和数据处理速率为兆位/s(M肠t/s)的运算器件。磁泡器件经过近20年研究和开发,已取得广泛的实际应用。 对磁泡材料的主要要求是:(l)各向异性常数凡>粤斌,磁化强度从>外磁场强度H;(2)杂质缺陷小,2一~”~’.J泌~-一‘产’~~一~一’、~尹一~~~’J”均匀性好。目前研究得比较清楚的有铁氧体单晶薄膜和稀土一过渡金属薄膜。从制备工艺和性能稳定、器件开发等情况看,以铁氧体磁泡材料比较成熟,早期是用钙钦石型铁氧体单晶片来作磁泡材料,后为YIG单晶薄膜所取代。它是用液相外延法在Gd3Ga5OI:(简称GGO)基片上生成的单晶薄膜,其厚为微米量级。表4为稀土石榴石R3FesolZ的磁性;表5为一些磁泡材料的基本特性数值。农4稀土石抽石R.Fe‘ol,的磁性┌───────────┬────┬────┬────┬────┬────┬────┬────┬────┬─────┬────┬────┐│R │Y │Sm │EU │Gd │Tb │Dy │、Ho │Er │T】11 │Yb │Lu │├───────────┼────┼────┼────┼────┼────┼────┼────┼────┼─────┼────┼────┤│补偿温度,~p,K │ 560 │ 560 │ 570 │ 290 │ 246 │ 220 │ 136 │ 84│4
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