1)  PL
PL 谱
2)  PL spectrum
PL谱
1.
Material structure was grown on(001)semi-induction InP substrate by molecular beam epitaxy(MBE) and measured by PL Spectrum.
衬底片选用(001)半绝缘InP单晶片,结构材料使用分子束外延(MBE)技术制备,并用PL谱对外延片进行测试,器件采用台面结构。
2.
It is found that the flow rate of O_2 influences the crystalline quality, surface morphology and PL spectrum of the as -grown ZnO thin films remarkably.
PL谱分析表明:随O_2气流量加大,带边峰明显增强,深能级峰明显减弱,ZnO薄膜光学质量提高。
3)  PL spectra
PL谱
4)  photoluminescence
PL谱
1.
By comparing the photoluminescence(PL) spectrum of etching and passivation surface of the p-CZT,potoluminescence(PL) spectra confirmed that using NH_4F/H_2O_2 as agent,the passivation treatment minimized the surface trap state density and decreased the deep level defects related to recombination of Cd vacancies.
对比了CZT晶片经腐蚀与钝化表面处理的PL谱,结果表明NH4F/H2O2作为CZT晶体表面钝化剂,钝化后CZT晶体表面陷阱态密度减小到最低程度,同时减小了与Cd空位复合有关的深能级杂质浓度。
2.
Optical characteristics of self-assembled Ge quantum dot superlattices (QDSLs) have been investigated using temperature-dependent photoluminescence (PL) and Raman scattering measurements.
对自组装生长的Ge量子点超晶格样品进行了光荧光谱 (PL谱 )和拉曼散射谱 (Raman谱 )实验测量研究 。
3.
Effectiveness of passivation is evaluated qualitatively by photoluminescence.
采用光荧光谱仪(PL)对钝化效果进行评价,对钝化前后样品的PL谱进行对比,发现钝化前后的样品的PL谱略有改进。
5)  PL spectrum
PL光谱
1.
According to the investigation of the well-known D-Band in the PL spectrum which has been associated to the misfit dislocations caused by the strain relaxation of SiGe epitaxial layer,the dislocations were found in both the SiGe epitaxial layer and the Si substrate.
对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。
6)  Photoluminescence polarization
偏振PL谱
参考词条
补充资料：《佩文斋广群芳谱·药谱》
《佩文斋广群芳谱·药谱》 《佩文斋广群芳谱·药谱》 　　药学著作。又名《广群芳谱·药谱》。八卷。清·刘灏著。刊于1708年。本书为《佩文斋广群芳谱》卷九十三-一百，共收药物720余种，系在《二如亭群芳谱·药谱》的基础上增补而成。每种药物标记的“原”字下，均为《群芳谱》原文，“增”字下，为新增加的内容，特别是新增的“汇考”及“集藻”二项，补充各种文史资料尤为丰富。此外还新增补了一些新药。但却删去了原书中种植、修治、服食、疗治等内容。现存三种清刻本，及商务印局馆铅印本。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。