1) electrochemical gap
电化学带隙
2) Electrochemical porosity
电化学孔隙率
3) optical band gap
光学带隙
1.
Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films;
氮分压对氮化铜薄膜结构及光学带隙的影响
2.
Study on FN-DLC thin films:(Ⅱ)effect of radio frequency power on the optical band gap of the thin films;
含氮氟化类金刚石(FN-DLC)薄膜的研究:(Ⅱ)射频功率对薄膜光学带隙的影响
3.
The refractive indexes and the absorption spectra of the samples were measured, and the en- ergy band gap and the indirect and direct allowed optical band gaps of the samples were calculated according to the Tauc equation, and the re.
测试了玻璃样品的折射率和吸收光谱,根据经典的Tauc方程计算了间接允许光学带隙和直接允许光学带隙,计算了样品的能量带隙,并估算了它们之间的关系。
4) optical gap
光学带隙
1.
The parameters such as bond structures ,optical gap of amorphous Si films are measured by Raman spectroscope,Fourier transform infrared(FTIR)spectroscope and ultraviolet-visible(UV-VIS) spectroscope.
结果表明通过乙烯掺杂制备的薄膜样品中存在着Si-C键,在R值变化的开始阶段薄膜的光学带隙随着R值增大而增大,在R=0。
2.
The results show that the band tail states are not continuative and explain why the optical gap of nc Si is broader than that of μ Si, p Si and c Si,while the conductivity of nc Si is lower than that of μ Si,p Si and c Si.
利用计算结果解释了纳米硅和微晶硅、多晶硅及单晶硅相比有较宽的光学带隙和较小的电导的现象。
3.
We also observed three absorption regions near the optical gap of amorphous MCT.
0μm范围内研究了薄膜的透射谱线,获得了薄膜的吸收系数(~8×104cm-1),研究了其光学带隙(约0。
5) optical energy gap
光学带隙
1.
The effects of nitrogen content in a fixed total sputtering gas flow on the preferential crystalline orientation,the mean crystalline grain size,the electrical resistivity,and the optical energy gap of as-deposited films were investigated.
采用反应射频磁控溅射法,在氮气和氩气的混合气体氛围中,玻璃基底上制备出了具有半导体特性的氮化铜(Cu3N)薄膜,并研究了混合气体中氮气分量对Cu3N薄膜的择优生长取向、平均晶粒尺寸、电阻率和光学带隙的影响。
6) optical bandgap
光学带隙
1.
Relationship between thermal stabilty and optical bandgap of fluorinated amorphous carbon films;
a-C:F薄膜的热稳定性与光学带隙的关联
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条