1) optical energy band gap
光学帯隙
2) optical band gap
光学带隙
1.
Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films;
氮分压对氮化铜薄膜结构及光学带隙的影响
2.
Study on FN-DLC thin films:(Ⅱ)effect of radio frequency power on the optical band gap of the thin films;
含氮氟化类金刚石(FN-DLC)薄膜的研究:(Ⅱ)射频功率对薄膜光学带隙的影响
3.
The refractive indexes and the absorption spectra of the samples were measured, and the en- ergy band gap and the indirect and direct allowed optical band gaps of the samples were calculated according to the Tauc equation, and the re.
测试了玻璃样品的折射率和吸收光谱,根据经典的Tauc方程计算了间接允许光学带隙和直接允许光学带隙,计算了样品的能量带隙,并估算了它们之间的关系。
3) optical gap
光学带隙
1.
The parameters such as bond structures ,optical gap of amorphous Si films are measured by Raman spectroscope,Fourier transform infrared(FTIR)spectroscope and ultraviolet-visible(UV-VIS) spectroscope.
结果表明通过乙烯掺杂制备的薄膜样品中存在着Si-C键,在R值变化的开始阶段薄膜的光学带隙随着R值增大而增大,在R=0。
2.
The results show that the band tail states are not continuative and explain why the optical gap of nc Si is broader than that of μ Si, p Si and c Si,while the conductivity of nc Si is lower than that of μ Si,p Si and c Si.
利用计算结果解释了纳米硅和微晶硅、多晶硅及单晶硅相比有较宽的光学带隙和较小的电导的现象。
3.
We also observed three absorption regions near the optical gap of amorphous MCT.
0μm范围内研究了薄膜的透射谱线,获得了薄膜的吸收系数(~8×104cm-1),研究了其光学带隙(约0。
4) optical energy gap
光学带隙
1.
The effects of nitrogen content in a fixed total sputtering gas flow on the preferential crystalline orientation,the mean crystalline grain size,the electrical resistivity,and the optical energy gap of as-deposited films were investigated.
采用反应射频磁控溅射法,在氮气和氩气的混合气体氛围中,玻璃基底上制备出了具有半导体特性的氮化铜(Cu3N)薄膜,并研究了混合气体中氮气分量对Cu3N薄膜的择优生长取向、平均晶粒尺寸、电阻率和光学带隙的影响。
5) optical bandgap
光学带隙
1.
Relationship between thermal stabilty and optical bandgap of fluorinated amorphous carbon films;
a-C:F薄膜的热稳定性与光学带隙的关联
6) optical gaps
光学间隙
1.
Structures of α-C:H films and their optical gaps;
非晶碳氢薄膜结构及光学间隙
补充资料：光学带隙（opticalbandgap）
光学带隙（opticalbandgap）
非晶态半导体的本征吸收边附近的吸收曲线通常分为三个区域：价带扩展态到导带扩展态的吸收为幂指数区；价带扩展态到导带尾的吸收为指数区；价带尾到导带尾的吸收为弱吸收区。非晶半导体的带隙没有明确的定义。定义其光学带隙的简单方法是E03或E04，即吸收系数为103cm-1或104cm-1时所对应的光子能量。物理意义较明确的定义方法是Tauc带隙，主要考虑幂指数区的带-带吸数，此时α(hv)∝c(hv-Eg)γ，C和γ与能带结构有关，对于抛物线形能带结构γ取2，由(αhv)1/2～hv关系曲线求得的Eg称为Tauc带隙。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条