1) apparent optical band gap
表观光学带隙
1.
It is found that the apparent optical band gap decreased and the red shift of optical absorption band edge increased as the diameter of TiO2 UFP coated decreased.
制备了一系列表面包覆硬脂酸的TiO_2超微粒,发现表面包覆硬脂酸的TiO_2超微粒随着超微粒粒径减小,其表观光学带隙(E_g)降低,即吸收光谱带边红移加大。
2.
A series of TiO2 ultrafine particles (UFP) coated with a layer of oleic acid radicals were synthesized, and we found that the apparent optical band gap decreased and the red shift of optical absorption band edge increased when the diameter of TiO2 UFP coated decreased.
结果表明,表面包覆油酸的TiO_2超微粒的表观光学带隙(E_s)随着超微粒粒径减小变小;相同粒径表面包覆油酸的TiO_2超微粒的表观光学带隙与表面包覆硬脂酸的TiO_2超微粒几乎相同,但比表面包覆十二烷基苯磺酸的TiO_2超微粒大。
2) apparent band-gap
表观带隙
3) optical band gap
光学带隙
1.
Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films;
氮分压对氮化铜薄膜结构及光学带隙的影响
2.
Study on FN-DLC thin films:(Ⅱ)effect of radio frequency power on the optical band gap of the thin films;
含氮氟化类金刚石(FN-DLC)薄膜的研究:(Ⅱ)射频功率对薄膜光学带隙的影响
3.
The refractive indexes and the absorption spectra of the samples were measured, and the en- ergy band gap and the indirect and direct allowed optical band gaps of the samples were calculated according to the Tauc equation, and the re.
测试了玻璃样品的折射率和吸收光谱,根据经典的Tauc方程计算了间接允许光学带隙和直接允许光学带隙,计算了样品的能量带隙,并估算了它们之间的关系。
4) optical gap
光学带隙
1.
The parameters such as bond structures ,optical gap of amorphous Si films are measured by Raman spectroscope,Fourier transform infrared(FTIR)spectroscope and ultraviolet-visible(UV-VIS) spectroscope.
结果表明通过乙烯掺杂制备的薄膜样品中存在着Si-C键,在R值变化的开始阶段薄膜的光学带隙随着R值增大而增大,在R=0。
2.
The results show that the band tail states are not continuative and explain why the optical gap of nc Si is broader than that of μ Si, p Si and c Si,while the conductivity of nc Si is lower than that of μ Si,p Si and c Si.
利用计算结果解释了纳米硅和微晶硅、多晶硅及单晶硅相比有较宽的光学带隙和较小的电导的现象。
3.
We also observed three absorption regions near the optical gap of amorphous MCT.
0μm范围内研究了薄膜的透射谱线,获得了薄膜的吸收系数(~8×104cm-1),研究了其光学带隙(约0。
5) optical energy gap
光学带隙
1.
The effects of nitrogen content in a fixed total sputtering gas flow on the preferential crystalline orientation,the mean crystalline grain size,the electrical resistivity,and the optical energy gap of as-deposited films were investigated.
采用反应射频磁控溅射法,在氮气和氩气的混合气体氛围中,玻璃基底上制备出了具有半导体特性的氮化铜(Cu3N)薄膜,并研究了混合气体中氮气分量对Cu3N薄膜的择优生长取向、平均晶粒尺寸、电阻率和光学带隙的影响。
6) optical bandgap
光学带隙
1.
Relationship between thermal stabilty and optical bandgap of fluorinated amorphous carbon films;
a-C:F薄膜的热稳定性与光学带隙的关联
补充资料：光学带隙（opticalbandgap）
光学带隙（opticalbandgap）
非晶态半导体的本征吸收边附近的吸收曲线通常分为三个区域：价带扩展态到导带扩展态的吸收为幂指数区；价带扩展态到导带尾的吸收为指数区；价带尾到导带尾的吸收为弱吸收区。非晶半导体的带隙没有明确的定义。定义其光学带隙的简单方法是E03或E04，即吸收系数为103cm-1或104cm-1时所对应的光子能量。物理意义较明确的定义方法是Tauc带隙，主要考虑幂指数区的带-带吸数，此时α(hv)∝c(hv-Eg)γ，C和γ与能带结构有关，对于抛物线形能带结构γ取2，由(αhv)1/2～hv关系曲线求得的Eg称为Tauc带隙。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条