1) depletion-layer thickness
耗尽层宽度
2) depletion-width variation
耗尽层宽度变化
3) collector depletion-layer width
集电极耗尽层宽度
4) depletion layer depth
耗尽层深度
5) depletion layer
耗尽层
1.
Proposed a model of the thin depletion layer which runs through the whole samples,and on the basis of this model the author explained the switching phenomena of the electrical conductivity of certain kinds of the Cu2O single crystal samples.
试验表明，跃变发生的温度随样品而异，提高电压时，样品的电导率会跃变到一个较高的数值，为了解释这种跃变现象，作者认为ＣＵ２Ｏ单晶的样品中存在有贯穿整个样品的耗尽层的模型。
2.
Under the assumption that only one kind of positive ion (Na +, for instance ) in glass is movable and negative ions only appear at the edge of the Na depletion layer, the relation of the depth of the depletion layer and bonding time during the anodic bonding of glass to Kovar alloy is obtained.
在假设玻璃中只有一种正离子 (Na+离子 )可移动 ,Na耗尽层中负离子仅出现在耗尽层边的情况下 ,根据电学方程得出玻璃—Kovar合金阳极连接中耗尽层厚度变化与连接时间的关
6) thick depletion layer
厚耗尽层
1.
The fabrication technology and performances of a thick depletion layer Si detector with pile-up structure besed on planar technology and ion implanted technique were described.
本文描述了一种具叠层结构基于平面工艺技术的厚耗尽层Si探测器的制备技术和性能测试结果。
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