1) multi-gate MOSFET
多面栅MOSFET
1.
As a new-type semiconductor device, multi-gate MOSFETs have many advantages compared with traditional MOSFETs, such as the nearly ideal subthreshold slope, higher carrier mobility, higher transconductance and higher driven-current, and stronger ability against short-channel effects.
多面栅MOSFET作为一种新型的半导体器件与传统MOSFET相比具有许多的优势:接近理想的亚阈值特性、较高的载流子迁移率、较高的跨导和电流驱动能力、较强的抑制器件短沟道效应的能力等。
4) MOSFET-gate dielectric
MOSFET栅介质
1.
The new research of MOSFET-gate dielectric was summarized.
本文综述了MOSFET栅介质的最新研究状况。
5) Tri-Gate MOSFET
三栅MOSFET
1.
Threshold Voltage Model for Tri-Gate MOSFET s;
三栅MOSFET阈值电压模型
6) Double-gate MOSFET
双栅MOSFET
1.
In this paper, new nanometer SOI-MOSFET devices including ultra-thin SOI devices, double-gate MOSFET, FinFET and strained channel MOSFET are introduced systematically and their performance are analyzed as well.
重点介绍器件进入纳米尺度后出现的MOSFET/SOI器件的新结构,如超薄SOI器件、双栅MOSFET、FinFET和应变沟道等SOI器件,并对它们的性能进行了分析。
2.
A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson s equation to obtain the relationship betwe en the surface potential and voltage in the channel region in a self-consistent way.
通过求解Poisson方程自洽地得到了表面电势随沟道电压的变化关系,从而推出了非掺杂对称双栅MOSFET的一个基于表面势的模型。
补充资料：多苯基多亚甲基多异氰酸酯
多苯基多亚甲基多异氰酸酯，简称PAPI，或称粗MDI，浅黄色至褐色粘稠液体．有刺激性气味。相对密度(20℃／20 ℃)1．2，燃点218℃。PAPI实际上是由50％MDI与50％官能度大于2以上的多异氰酸酯组成的混合物。升温时能发生自聚作用。溶于氯苯、邻二氯苯、甲苯等。PAPI的活性低，蒸气压低，只是TDI的百分之一，故毒性很低。
用于制造聚氨脂胶粘剂。也可直接加入橡胶胶粘剂中，改善橡胶与尼龙或聚酯线的粘接性能。贮存于阴凉、通风、干燥的库房内，远离火种、热源。严格防水、防潮，避免光照。
用于制造聚氨脂胶粘剂。也可直接加入橡胶胶粘剂中，改善橡胶与尼龙或聚酯线的粘接性能。贮存于阴凉、通风、干燥的库房内，远离火种、热源。严格防水、防潮，避免光照。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条