2) Si doped GaN
Si掺杂GaN
3) Ga_(1-x)Mn_xN
Mn掺杂GaN
1.
The results reveal a 100% spin polarized impurity band in band structure of Ga_(1-x)Mn_xN due to hybridization of Mn 3d and N 2p orbitals.
计算结果表明Mn掺杂GaN使得Mn 3d与N2p轨道杂化,产生自旋极化杂质带,材料表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料,折射率在带隙处出现峰值,紫外区光吸收系数随Mn浓度的增加而增大。
5) Al-doped
Al掺杂
1.
Al-doped ZnO nanorod arrays with different Al doping concentration were grown on ZnO seed layers by hydrothermal method.
采用水热法,在ZnO种子层上制备出不同Al掺杂量的ZnO纳米棒阵列薄膜,利用XRD、SEM、TEM、PL等检测手段对样品进行结构、形貌和发光性能分析。
2.
The density of the ceramics were measured with Archimedes theory,the ceramic phase structure was studied by XRD,the dielectric and pyroelectric properties of Al-doped Ba_(0.
采用传统陶瓷固相烧结工艺,制备了Al掺杂Ba_(0。
3.
The density of the ceramics were measured with Archimedes theory,the ceramic phase structure was studied by XRD,the dielectric and pyroelectric properties of Al-doped Ba0.
采用传统陶瓷固相烧结工艺,制备了Al掺杂Ba0。
6) Al doped
Al掺杂
1.
Pure and Al doped Я-Fe2O3 materials were prepared by a solution phase controlled hydrolysis me-thod, and were characterized by XRD, SEM and ICP techniques.
采用均相沉淀法制备了纯α-Fe2O3(300℃煅烧)和Al掺杂α-Fe2O3(300和400℃煅烧),使用SEM,XRD,ICP和红外光谱等手段进行表征,并利用气敏仪测试无水乙醇和90#汽油在不同条件下对材料的响应性能。
补充资料：gallium nitride GaN
分子式：
CAS号：
性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。
CAS号：
性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条