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1)  Zener tunneling
Zener隧穿
1.
Firstly, I provide a brief review of the previous achievements and investigations on the low-dimensional quantum devices and semiconductor superlattice, in which some principal theories such as Bloch Oscillations, Wannier-Stark ladder, Zener tunneling and related progress in experiments are introduced.
首先综述了过去三十年低维量子器件与半导体超晶格的发展与相关研究,介绍了Bloch振荡、Wannier-Stark台阶、Zener隧穿等关键理论以及相关实验方面的进展,并引入简化模型:紧束缚模型与单带模型。
2.
This transition was called Zener tunneling.
这种隧穿被人们后来称之为Zener隧穿
2)  Landau-Zener tunneling
Landau-Zener隧穿
1.
Nonlinear Landau-Zener tunneling in two-dimensional photonic lattices
二维周期光子晶格中的非线性Landau-Zener隧穿
3)  Rosen-Zener tunneling
Rosen-Zener隧穿
1.
Taking Rosen-Zener tunneling as the underlying process,a scheme to achieve nonlinear Ramsey interferometry with a two-component trapped Bose-Einstein condensate is proposed.
以非线性Rosen-Zener隧穿理论为基础,用两分量Bose-Einstein凝聚体设计了非线性Ramsey干涉计。
4)  nonlinear Landau-Zener tunneling
非线性Landau-Zener隧穿
1.
Two-level model of light propagation in photonic lattices and nonlinear Landau-Zener tunneling
光子晶格中光束演化的二能级模型及非线性Landau-Zener隧穿
5)  tunneling [英]['tʌnəlɪŋ]  [美]['tʌnəlɪŋ]
隧穿
1.
Resonant tunneling of acoustic waves in 1D phononic crystal;
声波在一维声子晶体中共振隧穿的研究
2.
Quantum Magnetic-tunneling Through a CaAs/Ga_(1-x)Al_xAs Superlattices:a Calculation of the Transmission Coefficient;
GaAs/Ga_(1-x)Al_xAs超晶格结构中量子磁隧穿传输系数的计算
3.
Influence of electron-phonon interaction on single electron tunneling in a quantum dot molecule;
电声子相互作用对量子点分子中单电子隧穿的影响
6)  Tunnel [英]['tʌnl]  [美]['tʌnḷ]
隧穿
1.
The current voltage characterization of a standard double barrier tunneling junctions(DBTJ) which forms room temperature single electron devices is computed by means of time dependent Schrdinger equation.
对形成室温单电子现象的典型串联双隧道结结构模型 ,利用含时薛定谔方程的求解 ,计算了其隧穿电流与偏压的关系 。
2.
In this letter, the current-voltage characteriazation of a standard tunneling junctions which forms room temperature single electron devices is computed by the solution of Schrodinger equation using WKB method.
本文对形成室温单电子现象的典型隧道结结构模型利用 WKB方法求解薛定谔方程计算其隧穿电流与偏压的关系。
3.
In this letter,the current voltage characteristic of a standard double barrier tunneling junctions (DBTJ),which forms room temperature single electron devices,is computed by solving the time dependent Schr[AKo¨D]dinger equation.
对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 。
补充资料:隧穿效应
分子式:
CAS号:

性质:见隧道效应。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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