1) LCD nondissipitive snubber
LCD无损吸收电路
1.
The paper makes a complete theory analysis for the operation of the LCD nondissipitive snubber used in the forward-reverse-combined converter.
本文针对带有LCD无损吸收电路的正-反激组合式变换器做了较详细的理论上的分析，并推导出各种关系式。
2) lossless snubber
无损吸收
1.
In order to eliminate the loss of the conventional RCD(resistor, capacitor and diode),a new lossless snubber using magnetism coupling is introduced.
为此,提出了一种新颖的磁耦合式无源无损吸收电路,将其应用于Boost电路中,并详细分析了该电路的工作原理。
3) absorbing circuit
吸收电路
1.
This article introduced the antijamming in the NC system design,from the shield(including electric field shield,magnetic screen and electromagnetic field shield) designs mentions,added the absorbing circuit to the perceptual load to suppress the transient state noise to give the specify,might avoid the NC system which disturbed creates softly breakdown.
本文介绍了抗干扰在数控系统中的设计,从屏蔽(包括电场屏蔽、磁场屏蔽和电磁场屏蔽)设计谈起,对感性负载加吸收电路来抑制瞬态噪声做了详细说明,可避免干扰造成的数控系统的“软”故障。
4) absorption circuit
吸收电路
1.
The reasons of dynamic voltage unbalancing of serial IGBTs are concluded : the differences in the absorption circuit parameters, the time-delays of gate driving signal and the gate driving circuit parameters.
设计了以L,R为感性负载的实验电路,采用仿真软件PSpice仿真分析出IGBT串联运行时动态不均压原因是吸收电路参数不一致、门极驱动信号延时不同、门极驱动电路参数不一致引起的。
5) snubber circuit
吸收电路
1.
Simulation design of snubber circuit based on P-N junction reverse recovery;
基于P-N结反向恢复过程的吸收电路的仿真设计
2.
Study of delta snubber circuit of GTO converter;
GTO变流器Δ型吸收电路的研究
3.
The causes are discussed from the inner structure of IGBT and the typical countermeasures are summarized,including soft-switching,snubber circuit and new switching component.
从IGBT的内部结构特点出发,讨论了IGBT工作中上述问题存在的原因,整理了目前国内外常用的一些处理措施,包括软开关技术、吸收电路技术以及研制新的开关元件等。
6) snubber
[英]['snʌbə] [美]['snʌbɚ]
吸收电路
1.
A passive snubber circuit with constant energy recovery ratio for high power inverters;
一种具有恒定能量回馈的吸收电路
2.
A double-differential-gate-drive circuit,in conjunction with a loss-less snubber reduces the switching loss of semiconductor devices,especially .
用一个双微分门极驱动电路和一个无损耗缓冲吸收电路共同抑制IGBT的开关损耗,特别是抑制IGBT拖尾电流产生的损耗。
3.
The experimental result shows that only a capacitor with low inductance is applicable as a snubber for IGBT invertors rated 50kVA.
从接地、屏蔽、吸收电路和减少引线电感等方面介绍了该逆变器的电磁兼容性设计。
补充资料：X射线无损探伤仪
X射线无损探伤仪
谬银._屏一潇麟X射线无损探伤仪
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条