1) Radio Frequency Negative Self-bias Voltage
射频自负偏压
2) RF negative bias
射频负偏压
1.
Effect of RF negative bias on structure and performance of DLC films prepared by ECR-RF-PECVD
射频负偏压对沉积类金刚石薄膜结构和性能的影响
3) RF self-bias
射频自偏压
1.
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。
4) Negative self-bias voltage
自负偏压
5) RF bias voltage
射频偏压
1.
In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.
对于上下电极双射频源的电感耦合(ICP)等离子体刻蚀设备的关键工艺参数——下电极射频偏压的变化特性进行了实验与物理定性分析。
6) negative bias
负偏压
1.
Aligned carbon nanotubes were prepared by negative bias-enhanced hot filament chemical vapor deposition system under glow discharge.
利用负偏压增强热丝化学气相沉积系统,在辉光放电的情况下制备出准直碳纳米管,并用扫描电子显微镜研究了不同负偏压对准直碳纳米管生长的影响。
2.
In order to analyze the effect of the negative bias on the adhesions strength between multilayer and substrate,and the hardness of the multilayer have been tested and the morphology has also been observed.
用电弧离子镀方法在高速钢、不锈钢与铜基体上沉积合成TiN/TiCN多层薄膜 ,在其他参数不变的情况下只改变负偏压 ,着重考察不同负偏压下薄膜的沉积温度、膜基结合强度、显微硬度以及表面形貌等 ,研究基体负偏压在沉积多层薄膜中所起的作用。
3.
Carbon nanotubes were synthesized on silicon substrates coated with NiFe films of different thickness by negative bias-enhanced hot filament chemical vapor deposition at different negative bias and pressure, and their growth was investigated by scanning electron microscopy.
利用负偏压增强热丝化学气相沉积在不同的负偏压和压强下 ,在沉积有不同厚度NiFe膜的Si衬底上制备了碳纳米管 ,并用扫描电子显微镜研究了它们的生长。
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参考词条