1) reverse recovery charge dispersity
反向恢复电荷分散性
2) Reverse recovery charge
反向恢复电荷
1.
New SiC Schottky diodes outperform their counterparts, exhibiting up to 600V blocking voltage with the absence of reverse recovery charge and current.
崭新的碳化硅(SiC)肖特基二极管优于它的竞争者,具有600V的阻断电压;而且没有反向恢复电荷和反向恢复电流。
2.
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
3) reverse recovery current
反向恢复电流
1.
This paper describes a method for calculating reverse recovery current parame- ters of the thyristor turnoff model.
本文论述了计算晶闸管关断模型反向恢复电流参数的一种方法。
4) reverse recovery over voltage
反向恢复过电压
5) reverse recovery characteristics
反向恢复特性
1.
However ,one draw back of SJ devices has been the poor body diode reverse recovery characteristics.
然而,普通sJ器件的一个缺点就是它的体二极管的反向恢复特性较差。
6) soft reverse recovery
软反向恢复特性
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条