1) reverse recovery loss
反向恢复损耗
1.
As the improvement of the load current,the conduction loss and reverse recovery loss of synchronous rectifier′s body-diode becomes more prominent.
低电压大电流开关电源大多采用基于同步整流的Buck拓扑,而随着输出电流的不断提高,同步整流管中体二极管的导通损耗和反向恢复损耗越来越成为提高效率的瓶颈。
2) reverse recovery
反向恢复
1.
A simple model is presented for a power diode with reverse recovery.
讨论了一种简单的二极管反向恢复模型，通过采用与存储电荷相关的寿命时间常数来考虑Ａｕｇｅｒ复合过程及少子扩散电流的影响，从而得到更为精确的结果。
2.
Aimed at the problems of voltage spikes and EMI caused by the rectifier diodes due to the reverse recovery,an im-proved spikes-suppressor is proposed,which can eliminate the parasitic oscillation and voltage spikes effectively.
针对输出整流管反向恢复带来的电压尖峰及电磁干扰等问题,设计了一种改进型尖峰抑制器。
3.
Furthermore,reverse recovery losses of main diodes are minimized,and auxiliary switches commutate at zero current.
此外,续流二极管的反向恢复损耗被降低到最小,辅助开关也实现了零电流开关。
3) Reverse-recovery
反向恢复
1.
The proposed converter can reduce the loss caused by the reverse-recovery current of the rectifier in the PFC boost converter and alleviate the relevant electromagnetic interference of the circuit.
它充分发挥Boost'DCM及CCM各自的优势,减少了PFCBoost变换器中输出二极管反向恢复电流引起的损耗,降低了电路的电磁干扰(EMI)。
4) unrecoverable loss
不可恢复损耗
5) reverse recovery time
反向恢复时间
1.
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
采用直拉单晶硅片代替成本较高的外延硅片,采取铂扩散的方法引入复合中心,从而控制少子寿命以减少快恢复二极管的反向恢复时间。
2.
Using the technology of Pt diffusion to produce diodes can shorten the reverse recovery time and increase the velocity of switching.
采用扩铂工艺制造二极管能够有效地减小开关二极管的反向恢复时间，提高其开关速度。
3.
The experiment results show that this kind of diode have fast reverse recovery time,large reverse softness and low reverse leakage.
测试结果表明,此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性,在国际上处于领先水平。
6) reverse recovery current
反向恢复电流
1.
This paper describes a method for calculating reverse recovery current parame- ters of the thyristor turnoff model.
本文论述了计算晶闸管关断模型反向恢复电流参数的一种方法。
补充资料：介质损耗角正切试验(见电容率与损耗因数试验)
介质损耗角正切试验(见电容率与损耗因数试验)
dielectric loss tangent test
)!eZh.sunhooJ一002匕engq一e sh一yon介质损耗角正切试验(dieleetri。1055 tangenttest)见电容率与损耗因数试验。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条