1) 4H-SiC substrate
4H-SiC基底
1.
Al2O3/SiO2 double-layer UV antireflection coatings were designed and fabricated on 4H-SiC substrate,and the validity of theoretical design was further verified by scanning electron microscope (SEM) and reflection spectrum.
在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。
2) H-SiC
4H-SiC
1.
Fabrication of AlGaN/GaN HEMT Grown on 4H-SiC;
4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制
2.
Fabrication of 4H-SiC Buried-Channel nMOSFETs;
4H-SiC埋沟MOSFET的研制(英文)
3.
Second-Order Raman Scattering from n- and p-Type 4H-SiC;
n型和p型4H-SiC的二级喇曼谱(英文)
3) RB-SiC substrate
RB-SiC基底
1.
A improved technological process to the surface modification of a RB-SiC substrate mirror was proposed according to the material special properties of the large scale and complicated light weighted RB-SiC materials for space projects.
为了满足空间用大口径、复杂轻量化结构RB-SiC基底反射镜对高性能表面质量的需求,针对RB-SiC基底的特性,提出了改进表面改性工艺的方法。
5) 4H-SiC JBS(junction barrier schottky)
4H-SiC结势垒肖特基
6) 4H-SiC film
4H-SiC薄膜
1.
The 4H-SiC films heteroepitaxially deposited on AlN/Si (111) substrates by chemical vapor deposition (CVD) are investigated in this work.
利用化学气相淀积(CVD)的方法在AlN/Si(111)复合衬底上成功实现了4H-SiC薄膜的异质外延生长,用X射线衍射(XRD)、扫描电子显微镜(SEM)、阴极荧光(CL)等方法对所得样品的结构特征、表面形貌和光学性质进行了表征测量。
补充资料：bioactive glass-ceramic composite reinforced by SiC whisker
分子式：
CAS号：
性质：由碳化硅晶须与生物活性玻璃陶瓷复合而成的生物陶瓷复合材料。高强度、高弹性模量、无毒的碳化硅晶须在陶瓷基材中弥散分布，使材料中的裂纹相对均匀，裂纹扩展发生转向和分支；外力作用下碳化硅晶须拔出时产生的拔出效应，使复合陶瓷的弯曲强度达460MPa，断裂韧性达4.3MPa·m1/2，维伯尔系数高达24.7，标志着它是可承力的生物陶瓷复合材料。
CAS号：
性质：由碳化硅晶须与生物活性玻璃陶瓷复合而成的生物陶瓷复合材料。高强度、高弹性模量、无毒的碳化硅晶须在陶瓷基材中弥散分布，使材料中的裂纹相对均匀，裂纹扩展发生转向和分支；外力作用下碳化硅晶须拔出时产生的拔出效应，使复合陶瓷的弯曲强度达460MPa，断裂韧性达4.3MPa·m1/2，维伯尔系数高达24.7，标志着它是可承力的生物陶瓷复合材料。
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参考词条