1) multi-phonon scattering
多声子散射
2) phonon scattering
声子散射
1.
Effect of phonon frequency on phonon scattering in isotope-doped Si;
声子频率对同位素掺杂硅声子散射的影响
2.
This paper focuses on the phonon frequency effect and the isotope-doped concentrates effect on the phonon scattering in isotope-doped Si.
掺杂点缺陷对声子的散射是影响电绝缘体热导率的重要机制之一,其中声子频率和掺杂点缺陷浓度是影响声子散射的重要因素。
3.
Phonons play a great role in the microcosmic mechanism of heat transfer of silicon,the process of phonon scattering in doped silicon is studied by molecular dynamics simulation with high performance computers in this paper, then the composition of energy is analyzed after scattering,in which the greater transmitted energy means the high thermal conductivity qualitatively.
声子导热是硅晶体中的主要导热微观机制,本文借助高性能计算机,利用分子动力学方法研究了掺杂点缺陷对硅中声子散射的过程,定量分析声子散射后的能量组成,透射能量多即定性理解为导热性好。
3) electron-phonon scattering
电声子散射
4) acoustic phonon scattering
声学声子散射
1.
The role of acoustic phonon scattering in charge transport in organic semiconductors:a first-principles deformation-potential study
第一性原理的形变势理论研究声学声子散射对电荷传输的影响
5) electron-electron scattering
电子-声子散射
1.
T2 is electron-electron scattering term,T3/2 is the term electron scattered by the disordered spin glasses,T5 is electron-phonon scattering term,T9/2 is electron-two magnon scattering term.
(1-x)LCMO/(x)YSZ的R-T曲线低温拟合系数的分析结果表明,在低温下电阻率行为式ρ=0ρ+ATa+BTb中,b=5是合理的,T5代表电子-声子散射项。
6) carrier-phonon scattering
载流子声子散射
补充资料：多声子过程(见非简谐效应)
多声子过程(见非简谐效应)
multiphonon process
多声子过程multiphonon proeess见非简谐效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条