1) Phonon dispersion frequency
声子散射频率
2) scattering frequency
散射频率
3) phonon scattering
声子散射
1.
Effect of phonon frequency on phonon scattering in isotope-doped Si;
声子频率对同位素掺杂硅声子散射的影响
2.
This paper focuses on the phonon frequency effect and the isotope-doped concentrates effect on the phonon scattering in isotope-doped Si.
掺杂点缺陷对声子的散射是影响电绝缘体热导率的重要机制之一,其中声子频率和掺杂点缺陷浓度是影响声子散射的重要因素。
3.
Phonons play a great role in the microcosmic mechanism of heat transfer of silicon,the process of phonon scattering in doped silicon is studied by molecular dynamics simulation with high performance computers in this paper, then the composition of energy is analyzed after scattering,in which the greater transmitted energy means the high thermal conductivity qualitatively.
声子导热是硅晶体中的主要导热微观机制,本文借助高性能计算机,利用分子动力学方法研究了掺杂点缺陷对硅中声子散射的过程,定量分析声子散射后的能量组成,透射能量多即定性理解为导热性好。
4) Phonon frequency
声子频率
1.
It is shown that the softening of E_ 2g phonon frequency,enchancement of the electron-phonon coupling and the phonon logarithm average frequency with contraction of the lattice constant along c-axis and elong.
通过比较MgB2薄膜双轴拉伸前后超导电性的变化可以看出,随着a轴晶格常数增大和c轴晶格常数减小,声子谱中硼的E2g声子频率显著下降,使得电声子耦合强度λ和声子对数平均频率ωln增强,提高了MgB2薄膜的超导转变温度。
2.
Considering the anharmonicity of phonon frequency, we obtain the phonon frequency of B_ 1g1mode to be 110cm -1, and th.
应用全势线性缀加平面波方法计算新超导体CaAlSi的电子能带结构,用带心冻结声子法计算了声子频率及电声子耦合常数,并讨论了它们的超导电性。
3.
Using zone-center frozen phonon method, and considering the anharmonicity of phonon frequency , we calculate the phonon frequencies and electron-phonon coupling constant of B1g mode.
第一部分用双层超格子原胞模型计算三元硅化物CaAlSi的电子能带结构,用带心冻结声子法计算了声子频率及电-声子耦合常数,并讨论了它们的超导电性。
5) electron-phonon scattering
电声子散射
6) multi-phonon scattering
多声子散射
补充资料：频率计量(见时间频率计量)
频率计量(见时间频率计量)
frequency metrology: see time and frequency metrology
口n IQ liliang顷率频率计皿(f比quency metrolo盯) 计t。见时闰
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条