1) duplexing grid
双工栅
2) DGO
双栅氧工艺
3) biaxial geogrid
双向土工格栅
1.
Experimental study on resilient modulus of soil reinforced by biaxial geogrid;
双向土工格栅加筋土回弹模量试验研究
2.
For conducting experimental study on alleviating bump at bridge-head,a method using biaxial geogrid reinforcement together with a short approach slab was applied in the approach embankment of a bridge in Connecting Expressway of Wuhan Yangluo Bridge across the Yangtze River.
为了研究桥头跳车问题,对采用双向土工格栅加筋与短搭板相结合的方法在武汉阳逻长江大桥接线上进行了实体工程试验研究,对桥头加筋和没有加筋路堤的分层沉降和地基沉降,以及路堤中的土压力进行了对比观测。
3.
The expansive soil samples reinforced with biaxial geogrid are adopted to carry out a series of tests at different dry density.
对双向土工格栅加筋膨胀土进行一系列不同压实密度下的无侧限压缩和固结不排水剪试验,研究了干密度对其强度与变形特性的影响。
4) two-way tensioned geogrid
双向土工格栅
1.
In this paper,the finite element method is used to study bridgehead embankment reinforced by two-way tensioned geogrid for the purpose of controlling vehicle bumping at bridgehead and to analyze the laws of influences of the geogrid layer spacing on the settlement,vertical additional stress distribution of the embankment and on the tensile stress and tensile strain of the geogrid.
用有限元法对利用双向土工格栅加筋桥头路堤,从而控制桥头跳车的问题进行研究。
2.
A silty sand-embankment reinforced by two-way tensioned geogrid was constructed.
用粉质红砂土修筑了一段双向土工格栅加筋试验路堤,现场测定了试验路基的回弹模量,研究了加筋层间距对回弹模量的影响规律。
5) two-way geogrids
双向土工格栅
1.
Test study on frictional strength of interlock blocks and two-way geogrids;
自嵌式砌块与双向土工格栅的摩擦强度试验研究
2.
Test study on interaction characteristics between two-way geogrids and clay;
双向土工格栅与黏土界面作用特性试验研究
6) double-gate
双栅
1.
Transient characteristic analysis of a CMOS circuit based on a double-gate dual-strained channel SOI MOSFET with the effective gate length scaling down to 25nm is presented.
在提出双栅双应变沟道全耗尽SOI MOSFET新结构的基础上,模拟了沟道长度为25nm时基于新结构的CMOS瞬态特性。
2.
A novel fully-depleted SOI device structure with a double-gate and dual-strained channel is presented.
提出了一种全新的器件结构——双栅双应变沟道全耗尽SOIMOSFETs,模拟了沟道长度为25nm时器件的电学特性。
3.
The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors.
解释近来双栅纳米硅MOS晶体管实验特性——两条电子和两条空穴表面沟道,同时并存。
补充资料:X线滤线栅半径
X线滤线栅半径
放射学术语。又称栅-焦距。呈弧形排列的滤线栅铅条与充填物高度的延长线于空间聚焦为一点,此聚焦点到栅平面的垂直距离为栅-焦距。用于聚焦式滤线栅。栅-焦距有75、90、100、120、200cm 几种。使用聚焦式滤线栅时,原则
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条