1) binary and bipolar interconnection
双极二值化互连
2) cross-correlation two-way extreme value method
互相关双向极值法
3) interconnects limits
互连极限
1.
The main focus of this paper is study on global interconnects limits, including the limits effects of global interconnects as the technology advances, optimization for global interconnects delay and bandwidth, analysis on global interconnects models, investigation interconnects and CMOS model’s effects on performance.
(1)本文首先介绍了互连线的相关概念,并从基本理论级,器件级和电路级,分析了集成电路互连极限概况。
4) double-layer interconnection
双层互连
5) Complementary bipolar
互补双极
1.
The process is compatible to the existing double poly-silicon self-aligned NPN transistor process,which can be used to fabricate high-performance complementary bipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容,可用于制造高性能的互补双极电路。
6) Double-threshold binaryzation
双门限二值化
补充资料：双二乙二醇基化钛化双-2,4-戊烷二酯
CAS：84788-13-6
中文名称：双二乙二醇基化钛化双-2,4-戊烷二酯
英文名称：bis(Diethyleneglycoxy)titanium bis(2,4-Pentanedionate)
中文名称：双二乙二醇基化钛化双-2,4-戊烷二酯
英文名称：bis(Diethyleneglycoxy)titanium bis(2,4-Pentanedionate)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条