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1)  Silicon wafer polished both sides
双面抛光硅单晶
2)  Polished single crystal silicon wafer
硅单晶抛光片
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3)  polishing agent for mono-crystalline silicon
单晶硅抛光剂
4)  double-sided polishing
双面抛光
1.
Based on the analysis of the process of double-sided polishing,we establish a mathematical model when the double-sided polishing machine working in a calm movement state,simulate the process of double-sided polishing by programming language as changing the parameters.
分析了双面抛光机的加工过程,建立了抛光晶片在双面抛光机平稳运动状态下运动的数学模型,采用计算机对双面抛光加工进行运动仿真,并通过改变不同的参数值,得出抛光过程中不同参数对抛光效果的影响。
2.
The wafer motion and the load in double-sided polishing process are main factors which affect the wafer surface quality.
晶片在双面抛光加工过程中具有多向运动、受力复杂、表面材料微细去除的特征,晶片的运动和受力是影响双面抛光加工质量的主要因素。
3.
According to the characteristics of core,clad and solid rim glass material of microchannel plate(MCP),the mechanism of double-sided polishing of MCP was analyzed.
基于微通道板皮料、芯料、实体边玻璃材料的特点,分析了微通道板的双面抛光机理,研究了抛光工艺参数(抛光粉、抛光压力、抛光液pH值等)对MCP平面粗糙度、表面质量的影响,提出了微通道板的抛光工艺及参数:抛光粉应选择莫氏硬度为6、粒度为1。
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5)  double sided polishing
双面抛光
1.
Based on the kinematic analysis of the planet-double sided polishing process, the equation of relative velocity(the workpiece to the polishing plate) is established.
文中通过行星轮式双面抛光的运动分析,得到工件相对于抛光盘的速度表达式;在Preston方程基础上,建立了材料去除函数和抛光均匀性函数;进行计算机仿真,讨论了不同转速比对抛光均匀性的影响;并通过加工实验验证了仿真与实验结果的一致性,为抛光加工工艺参数的确定提供理论依据。
2.
The precise double sided polishing process is one of the main methods of getting the ultra-smooth surface for these materials.
光电子信息产业的快速发展,要求蓝宝石、单晶硅等材料高效率、超光滑表面加工,精密双面抛光加工是得到这些材料超光滑表面的主要加工方法之一。
3.
In this paper, the new way of double sided polishing processing technic of silicon wafer was designed, and polished process on the new double sided polishing machine.
双面抛光已成为硅晶片的主要后续加工方法,但由于需要严格的加工条件,很难获得理想的超光滑表面。
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6)  double-side polishing
双面抛光
1.
Thus,the application range is widened,the work efficiency is raised by double-side lapping and double-side polishing,and the labour intensity is reduced.
为了提高环形精磨、抛光机的应用效率，文章探讨了对环形精磨、抛光机进行改造，扩大其应用范围，达到双面精磨，双面抛光，可提工作效率，减轻劳动强度。
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补充资料：直径6英寸硅单晶及单晶炉


直径6英寸硅单晶及单晶炉


　　巍 户亡‘砚.士释L朴品及沪晶护万引门l
　　
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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