1) LTPL
低温光致发光
1.
In this article, low temperature photoluminescence (LTPL) measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃.
本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。
2.
In this thesis, irradiation-induced defects in 6H-SiC samples after neutron andelectron irradiation having different energies have been studied using lowtemperature photoluminescence (LTPL) and deep level transient spectroscopy (DLTS)techniques.
本文用低温光致发光谱(PL)和深能级瞬态谱(DLTS)技术对中子和不同能量电子辐照后6H-SiC外延层的辐照诱生缺陷进行了研究，研究了不同辐照能量下辐照诱生缺陷的产生以及它们的退火行为，分析了它们在退火过程中的迁移、解体和重新组合等演变过程。
2) Low-temperature photoluminescence
低温光致发光谱
3) photoluminescence spectroscopy (PL)
低温光致发光光谱
4) room temperature photoluminescence
室温光致发光
1.
By fitting the room temperature photoluminescence peak wavelength of the highly strained InGaAs/GaAs quantum well,we obtain the diffusion coefficients and the activation energy of In-Ga atoms interdiffusion (0.
本文采用假设InGaAs/GaAs量子阱中的InGa原子扩散为误差函数扩散并解任意形状量子阱的薛定谔方程的方法,对不同退火温度下InGaAs/GaAs量子阱室温光致发光峰值波长拟合,得到了In原子在高应变InGaAs/GaAs量子阱中的扩散系数以及扩散激活能(0。
5) photoluminescent thermometer
光致发光温度计
6) Photoluminescence (PL) spectra at room temperature
室温光致发光谱
补充资料：场致发光材料(见电致发光材料)
场致发光材料(见电致发光材料)
electroluminescent material
见场致发光材料eleetrolumineseent material 电致发光材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条