1) RF self-bias
射频自偏压
1.
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。
2) Radio Frequency Negative Self-bias Voltage
射频自负偏压
3) RF bias voltage
射频偏压
1.
In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.
对于上下电极双射频源的电感耦合(ICP)等离子体刻蚀设备的关键工艺参数——下电极射频偏压的变化特性进行了实验与物理定性分析。
4) RF negative bias
射频负偏压
1.
Effect of RF negative bias on structure and performance of DLC films prepared by ECR-RF-PECVD
射频负偏压对沉积类金刚石薄膜结构和性能的影响
5) Radio-frequency and Pulse Sheaths
射频及脉冲偏压鞘层
6) Rf-bias
射频偏置
补充资料：自调自净自度
【自调自净自度】
（术语）同自调项。
（术语）同自调项。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条