1) quantum confinement
量子限制
1.
The light centers of this structure are analyzed by using configuration coordinate,and the electroluminescence process of this structure is studied by using quantum confinement-luminescence center model.
利用位形坐标模型分析了锗/氧化硅纳米多层膜的发光中心,并用量子限制-发光中心模型对该纳米结构的电致发光过程作了研究,研究表明锗/氧化硅纳米多层膜的电致发光主要来自SiO2层的发光中心。
2.
By comparison on the effects of quantum confinement and Coulomb blockade on Fermi level of metal nanocrystal,it is found that Coulomb blockade could seriously deteriorate the data retention capability of metal nanocrystal memory(MNCM)device.
对比分析讨论了量子限制效应与库仑阻塞效应对金属纳米晶费密能级的影响后,发现库仑阻塞效应会严重削弱器件数据保持能力。
3.
Several models were proposed according to various experimental results: quantum confinement model, surface state recombination model, siloxene derivatives model, and phonon assistant transition model, etc.
根据各自的实验结果提出了不同的模型 :量子限制、表面态复合、硅氧烷及其衍生物、以及声子辅助跃迁等 。
2) Restricted quantum groups
限制量子群
3) quantum confinement effect
量子限制效应
1.
We report recent experimental evidence for the quantum confinement effect in 3C-SiC nanoparticles.
报道了关于3C-SiC纳米颗粒量子限制效应的实验证据。
2.
The preparation and the quantum confinement effects of amorphous St3N4 nanoparticles are reported in this paper.
本文报道了非晶氨化硅纳米粒子的制备及量子限制效应。
3.
For silicon nanostructures,the traditional Tauc method that succeeded in amorphous material is not applicable since the optical absorption of silicon nanostructures would be affected not only by the quantum confinement effect of nanoparticals in the films but also by their concomitant microstructural disorder.
采用量子限制效应模型对镶嵌有纳米非晶硅粒子的氢化氮化硅薄膜的光吸收进行了理论模拟,探讨了由吸收谱分析给出该结构薄膜光学参数的方法,并通过对不同氮含量样品的讨论给出了量子限制效应和纳米硅粒子表面的结构无序对薄膜光吸收特性的影响规律。
4) quantum confinement
量子限制效应
1.
Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells
量子限制效应对δ掺杂GaAs/AlAs多量子阱中铍受主态寿命的影响
2.
The results show that ion implantation makes free Si in the material change to SiNn(n=l, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.
荧光谱研究表明纳米Ｓｉ３Ｎ４具有明显的量子限制效应，并且荧光峰的位置和强度存在不稳定性。
5) quantum confinement effects
量子限制效应
1.
Then,we got quantum confinement effects of the lowest conduction band states in semiconductor quantum dots of four-teen semiconductor.
采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。
6) Restrictions factors on output
限制产量因子
补充资料：量子限制效应（quantumconfinementeffect）
量子限制效应（quantumconfinementeffect）
微结构材料三维尺度中至少有一个维度与电子德布罗意（deBroglie）波长相当，因此电子在此维度中的运动受到限制，电子态呈量子化分布，连续的能带将分解为离散的能级，当能级间距大于某些特征能量（如热运动量KB；塞曼能hω，超导能隙Δ等）时，系统将表现出和大块样品不同的甚至是特有的性质，例如超晶格中由于能级离散引起的带隙展宽及吸收边的蓝移。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条