1) Green-band luminescence
绿带发光
1.
The relation between Green-band luminescence of 4H-SiC homoepitaxial layer and defects;
4H-SiC同质外延的绿带发光与缺陷的关系
2) Green band
绿色发光带
3) green luminescence
绿光发光
1.
The intensity of the green luminescence varies with the doping concentrations.
掺杂后的T-ZnO出现明显的绿光发光特征,其发光强度随掺杂浓度增加先降低后增加。
4) greenish cast
带绿色光
5) green PL
绿光发射
1.
For the vacuum annealed samples at 830 ℃, the intensity of the green PL increases markedly.
研究了室温下薄膜的光致发光特性 ,观察到显著的单绿光发射 (波长为 5 1 4nm)峰。
2.
After annealing in the air, the intensity of the green PL decreased.
在室温下观察到了薄膜的紫光(398nm)和绿光发射 (490nm)。
6) green emission
绿光发射
1.
Strong monochromatic green emission located at 514?nm has been observed when excited with 320?nm light at room temperature (RT).
报道了用射频磁控溅射法在硅衬底上制备出具有好的 (0 0 2 )择优取向的多晶ZnO薄膜 ,在 5 14nm处观察到显著的单色绿光发射峰 ;且随着氧分压的增加 ,绿光发射峰的强度减弱 。
补充资料：场致发光材料(见电致发光材料)
场致发光材料(见电致发光材料)
electroluminescent material
见场致发光材料eleetrolumineseent material 电致发光材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条