1) interband luminescence
带间发光
2) blue-band emission
蓝带发光
1.
The influence of blue-band emission in GaN-based green light emitting diode(LED) materials on the electro-optical conversion efficiency of device is studied by photoluminescence(PL) spectra at room temperature and low temperature 10K.
分析比较了在不同外延生长条件下 Ga N基高 In组分绿光 L ED材料室温和低温 10 K下光致发光谱中蓝带发光峰 ,研究了外延结构中 p型层蓝带峰发光特性对材料晶体质量和器件电光转换效率的影响 。
3) luminescence zonal texture
发光环带
4) luminescence band
发光带
1.
Aduterating the impurity,copper,in porous silion will cause the accessional luminescence band which we consider as a result of that the carriers may be recombined at the higher energy level of the impurity.
多孔硅中掺入杂质铜 ,将引起附加发光带。
2.
By observing the photoluminescence spectrum of porous silion after disp o sal, we find that the spectrum appears four luminescence bands relatin g to the impurity s energy level which results from the recomposition for carriers at the higher energy level.
观测了处理后多孔硅的光致发光谱 ,其光谱出现 4个与铝杂质能级有关的发光带。
3.
The new 440 nm luminescence band of lead-doped.
并解释了晶体内440 nm发光带起源于W的5 d态到Pb的6 s的金属离子间电子转移过程。
5) Green-band luminescence
绿带发光
1.
The relation between Green-band luminescence of 4H-SiC homoepitaxial layer and defects;
4H-SiC同质外延的绿带发光与缺陷的关系
6) 0.95μm luminous strip
0.95μm发光带
补充资料：场致发光材料(见电致发光材料)
场致发光材料(见电致发光材料)
electroluminescent material
见场致发光材料eleetrolumineseent material 电致发光材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条