1) bandgap blue shift
带隙蓝移
1.
The result shows that the bandgap blue shift depends on the thickness of quantum wells and the depth of quantum well layer which forms the surface.
研究结果表明 ,由氖离子注入引起量子阱带隙蓝移 。
2) blue-shift of optical band gap
光学带隙蓝移
3) blue-shift
蓝移
1.
Result showed that the absorption blue-shifted obviously and Fe~3+ had remarkable doped effect on polymerized aniline.
光谱研究表明,Fe3+加入后,紫外吸收峰蓝移较大幅度,Fe3+对聚苯胺的链结构有显著的掺杂作用。
2.
The optical-absorption spectra in the range of 300-800nm show the characteristic of single plasmon resonance absorption band,and the absarption band shows blue-shift with decreasing the molar ratio of HAuCl_4 to AgNO_3 in the reacting solution.
300-800nm范围的吸收光谱研究发现,Au/Ag合金纳米颗粒具有单峰等离子体吸收特征,且随着反应液中氯化金和硝酸银的摩尔比的减少,吸收峰将产生蓝移。
3.
The blue-shift in the spectra of ultrafine YAG:Ce~(3+) powders was found.
与普通的共沉淀法合成的YAG:Ce3+相比,高分子网络凝胶法于比较低的温度下(900℃)获得YAG物相,合成的YAG:Ce3+微粉光谱谱峰存在明显的蓝移现象。
4) blueshift
蓝移
1.
The experimental results show that,in the interference field,the normalized spectrum is redshifted at some observation points,is blueshifed at others,and the spectral shift changes rapidly from red shift to blueshifted at the critical points,i.
实验结果表明,在干涉光场中,归一化光谱在某些观测点处发生红移,而在另一些观测点处发生蓝移,并且在临界点位置,光谱位移由红移迅速转变为蓝移,即发生了光谱开关现象。
5) blue shift
蓝移
1.
The studies on spectral reflectance s “red shift”and“blue shift”of Vitex negulido var. heterophylla at Taishang gold area in Shandong province;
山东省台上金矿区荆条反射光谱的“红移”和“蓝移”现象
2.
The result proved that the infrared absorption spectroscopy of nanoparticles were blue shift and Widezation.
而对纳米氮化硅进行了红外吸收光谱的测量,观察到了频移和吸收带的宽化,说明纳米结构红外吸收谱具有蓝移和宽化现象。
3.
It is discovered that the light absorption density of the compound SP·HCl(four spironaphthooxazine compounds and hydrochloric acid),under the room temperature,will increase with the solution polar,and the absorption spectrum has the blue shift.
HCl),随溶液极性的增加,其吸光强度增大,吸收光谱发生蓝移。
6) blue zone
蓝带
1.
An analysis of the "blue zone" or "blue spot" on Sn-P bronze strip surface;
锡磷青铜锭坯表面“蓝带”、“蓝斑”形成原因探讨
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条