光荧光强度,photocathode,在线英语词典,英文翻译,专业英语

1) photocathode

光荧光强度

2) RBC-mean forward scattered light intensity

尿红细胞前向散射光荧光强度

3) photoluminescence

光荧光

Raman spectra and photoluminescence are used to study the stress state of the resulting GaN film.

使用拉曼光谱和光荧光的手段对GaN外延膜中的残余应力进行了研究。

The samples before and after annealings are analyzed by the photoluminescence.

对所制备的样品薄膜在氮气气氛中分别采取了快速退火和慢速退火处理 ,并对退火前后的样品进行了光荧光 ( PL)分析。

The optical and microstructural properties of nitrided self-assembled InAs/GaAs quantum dots were investgated by low temperature(13 K) photoluminescence(PL) and transmission electron microscopy(TEM).

用低温光荧光(PL)和透射电子显微镜(TEM)研究了表面氮化自组织InAs/GaAs量子点的光学性能和微观结构。

4) Photoluminescence spectrum

光荧光谱

5) Laser fluorescence

激光荧光

AIM: Using a new laser fluorescence device - the KaVo DIAGNOdent,we studied the occlusive effects of mixed solution of NaHCO 3 and NaF on dentinal tubules.

目的 :用激光荧光仪 (KaVoDIAGNOdent)定量研究碳酸氢钠和氟化钠混合液对牙本质小管的堵塞作用。

6) photoluminescence

光荧光谱

TEM(Transmission Electron Microscope) and photoluminescence measurements at room temperature and low temperature show that the quantum wells have very bad optical property under bilayer-by-bilayer growth mode and have nice optical property and rough i.

通过透射电子显微镜(TEM)、室温和低温光荧光谱(PL谱)对两种生长模式下的样品进行了测量。

About 184meV blue shift in photoluminescence (PL) spectrum on SL is obtained when the wafer is irradiated using cw 1.

0 64 μm连续输出的 Nd∶YAG激光器对超晶格外延片进行了聚焦辐照 ,室温光荧光谱得到了 1 84 me V的蓝移 ,说明激光辐照与热退火一样会产生量子阱混合效应 ,光荧光谱的双峰位表明运用激光处理量子阱外延片具有一定的空间选择性。

Blue shift of band gap for InGaAs/InP MQW structures caused by impurity-free vacancy disordering was investigated using photoluminescence (PL) and secondary ion mass spectrum (SIMS).

用光荧光谱和二次离子质谱的方法 ,研究了由Si3N4 电介质薄膜引起的无杂质空位诱导InGaAs/InP多量子阱结构的带隙蓝移。

参考词条

光荧光谱仪白光荧光粉光荧光材料光荧光谱（PL）蓝绿光荧光激光荧光仪红光荧光粉黯光荧光粉分光荧光法偏光荧光计日光荧光灯光致发光（荧光）胆管空肠吻合术

补充资料：表光合强度(见光合强度)

表光合强度(见光合强度)
forecast of sowing or transplanting time

b iaoguanghe qiangdu表光合强度见光合强度

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

首页 \| 翻译 \| 影视 \| 论坛 \| 索引光荧光（PL）光荧光光谱激光荧光法光荧光扫描光荧光（PL）谱

1) photocathode 光荧光强度 2) RBC-mean forward scattered light intensity 尿红细胞前向散射光荧光强度 3) photoluminescence 光荧光 1. Raman spectra and photoluminescence are used to study the stress state of the resulting GaN film. 使用拉曼光谱和光荧光的手段对GaN外延膜中的残余应力进行了研究。 2. The samples before and after annealings are analyzed by the photoluminescence. 对所制备的样品薄膜在氮气气氛中分别采取了快速退火和慢速退火处理 ,并对退火前后的样品进行了光荧光 ( PL)分析。 3. The optical and microstructural properties of nitrided self-assembled InAs/GaAs quantum dots were investgated by low temperature(13 K) photoluminescence(PL) and transmission electron microscopy(TEM). 用低温光荧光(PL)和透射电子显微镜(TEM)研究了表面氮化自组织InAs/GaAs量子点的光学性能和微观结构。 4) Photoluminescence spectrum 光荧光谱 5) Laser fluorescence 激光荧光 1. AIM: Using a new laser fluorescence device - the KaVo DIAGNOdent,we studied the occlusive effects of mixed solution of NaHCO 3 and NaF on dentinal tubules. 目的 :用激光荧光仪 (KaVoDIAGNOdent)定量研究碳酸氢钠和氟化钠混合液对牙本质小管的堵塞作用。 6) photoluminescence 光荧光谱 1. TEM(Transmission Electron Microscope) and photoluminescence measurements at room temperature and low temperature show that the quantum wells have very bad optical property under bilayer-by-bilayer growth mode and have nice optical property and rough i. 通过透射电子显微镜(TEM)、室温和低温光荧光谱(PL谱)对两种生长模式下的样品进行了测量。 2. About 184meV blue shift in photoluminescence (PL) spectrum on SL is obtained when the wafer is irradiated using cw 1. 0 64 μm连续输出的 Nd∶YAG激光器对超晶格外延片进行了聚焦辐照 ,室温光荧光谱得到了 1 84 me V的蓝移 ,说明激光辐照与热退火一样会产生量子阱混合效应 ,光荧光谱的双峰位表明运用激光处理量子阱外延片具有一定的空间选择性。 3. Blue shift of band gap for InGaAs/InP MQW structures caused by impurity-free vacancy disordering was investigated using photoluminescence (PL) and secondary ion mass spectrum (SIMS). 用光荧光谱和二次离子质谱的方法 ,研究了由Si3N4 电介质薄膜引起的无杂质空位诱导InGaAs/InP多量子阱结构的带隙蓝移。参考词条光荧光谱仪白光荧光粉光荧光材料光荧光谱（PL）蓝绿光荧光激光荧光仪红光荧光粉黯光荧光粉分光荧光法偏光荧光计日光荧光灯光致发光（荧光）胆管空肠吻合术补充资料：表光合强度(见光合强度) 表光合强度(见光合强度) forecast of sowing or transplanting time b iaoguanghe qiangdu表光合强度见光合强度说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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