1) photoluminescence spectra
光荧光谱仪
2) photoluminescence
光荧光
1.
Raman spectra and photoluminescence are used to study the stress state of the resulting GaN film.
使用拉曼光谱和光荧光的手段对GaN外延膜中的残余应力进行了研究。
2.
The samples before and after annealings are analyzed by the photoluminescence.
对所制备的样品薄膜在氮气气氛中分别采取了快速退火和慢速退火处理 ,并对退火前后的样品进行了光荧光 ( PL)分析。
3.
The optical and microstructural properties of nitrided self-assembled InAs/GaAs quantum dots were investgated by low temperature(13 K) photoluminescence(PL) and transmission electron microscopy(TEM).
用低温光荧光(PL)和透射电子显微镜(TEM)研究了表面氮化自组织InAs/GaAs量子点的光学性能和微观结构。
3) Photoluminescence spectrum
光荧光谱
4) Laser fluorescence
激光荧光
1.
AIM: Using a new laser fluorescence device - the KaVo DIAGNOdent,we studied the occlusive effects of mixed solution of NaHCO 3 and NaF on dentinal tubules.
目的 :用激光荧光仪 (KaVoDIAGNOdent)定量研究碳酸氢钠和氟化钠混合液对牙本质小管的堵塞作用。
5) photoluminescence
光荧光谱
1.
TEM(Transmission Electron Microscope) and photoluminescence measurements at room temperature and low temperature show that the quantum wells have very bad optical property under bilayer-by-bilayer growth mode and have nice optical property and rough i.
通过透射电子显微镜(TEM)、室温和低温光荧光谱(PL谱)对两种生长模式下的样品进行了测量。
2.
About 184meV blue shift in photoluminescence (PL) spectrum on SL is obtained when the wafer is irradiated using cw 1.
0 64 μm连续输出的 Nd∶YAG激光器对超晶格外延片进行了聚焦辐照 ,室温光荧光谱得到了 1 84 me V的蓝移 ,说明激光辐照与热退火一样会产生量子阱混合效应 ,光荧光谱的双峰位表明运用激光处理量子阱外延片具有一定的空间选择性 。
3.
Blue shift of band gap for InGaAs/InP MQW structures caused by impurity-free vacancy disordering was investigated using photoluminescence (PL) and secondary ion mass spectrum (SIMS).
用光荧光谱和二次离子质谱的方法 ,研究了由Si3N4 电介质薄膜引起的无杂质空位诱导InGaAs/InP多量子阱结构的带隙蓝移。
6) Photoluminescence spectra
光荧光谱
1.
The optic character in GaAs/AlGaAs quantum wells was studied under the influence of electron irradiation using the photoluminescence spectra.
利用光荧光谱研究了带电粒子辐照对 Ga As/Al Ga As多量子阱光学性质的影响。
参考词条
补充资料：SPEX1403型激光拉曼光谱仪
SPEX1403型激光拉曼光谱仪
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说明：补充资料仅用于学习参考，请勿用于其它任何用途。