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1)  reverse saturation current density
反向饱和电流密度
1.
The experimental results of J-V characteristic of n-ZnO/p-Si heterojunction are first reported—the reverse saturation current density of annealed n-ZnO/p-Si heterojunction reduces by 10 times as compared with that of unannealed.
本文首次报道 n-Zn O/p-Si异质结 J-V特性实验测量的初步结果——经退火处理的异质结反向饱和电流密度比未经退火的减少一个数量级 ,表明退火改善 Zn O/Si晶格界面结构 ,提高了 n-Zn O/p-Si异质结性
2)  reverse saturation current
反向饱和电流
1.
In certain range, the CIGS solar cells with the lower values of diode quality factor A and reverse saturation current J0 show the higher efficiency, which indicates the recombination of light-generated carrier mainly occurred in the PN junction.
在一定范围内,CIGS薄膜电池的二极管品质因子A和反向饱和电流J0值越小,电池的转换效率越高,这说明CIGS电池的复合主要发生在PN结区内。
2.
It is found that the output photocurrent of the same piece of solar cell remains constant when the temperature and irradiation are the same and when the diode quality factors and reverse saturation currents are different.
文中通过理论分析与仿真研究,发现同一块太阳能电池在相同的温度和照度、不同的二极管品质因子和反向饱和电流下,输出的光生电流是相等的。
3)  saturated current density
饱和电流密度
4)  p-n junction leakage reverse current
p-n结反向饱和电流
5)  reverse saturation-current effect
反向饱和电流效应
6)  saturated density
饱和密度
1.
This equation not only can be used to calculate saturated density of 3He, but is also of great significance to generate the equation of state for 3He in both liquid and gas regions.
采用非线性最小二乘回归方法拟合3He饱和区气液密度实验数据 ,提出精度满足要求的3He气液饱和密度方程。
补充资料:计时电流反向技术
分子式:
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性质: 一种电化学研究方法,是对工作电极施加第一个能产生某种待测物质的电势阶跃后,再施加与初始阶跃反向的第二个电势阶跃,可通过电流-时间曲线对第一阶跃产物进行检测。

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