1) nonpolar semiconductor
非极性半导体
2) polar semiconductor
极性半导体
1.
Epitaxial growth of polar semiconductors on nonpolar substrates often leads to structural defects known as antiphase domains (APDs) due to constituent atoms occupying improper sublattices.
极性半导体GaAs在非极性半导体Si表面外延生长 ,普遍选用 (10 0 )面Si材料作衬底 ,外延时由于Ga ,As原子占据不合适的晶格位置 ,通常导致结构缺陷———反相畴产生 ,而选用(10 0 )面偏向 [0 11]方向 4°或 (2 11)面的Si作衬底 ,可以有效消除反相
2.
In this paper,the properties of the surface magnetopolaron weakly coupled with surface optical phonons and surface acoustic phonons in polar semiconductor were studied.
本文研究极性半导体中电子与表面光学声子和表面声学声子均为弱耦合时表面磁极化子的性质 ,讨论反冲效应中不同波矢声子之间相互作用对表面磁极化子有效质量的影响。
3) polar semi-conductor
极性半导体<冶>
4) nonmagnetic semiconductor
非磁性半导体
1.
Extraordinary magnetoresistance in nonmagnetic semiconductors:The effective-medium approximation;
非磁性半导体异常磁电阻效应的有效介质理论
5) Polyatomic polar semiconductors
多原子极性半导体
6) semiconductor electrode
半导体电极
1.
The progress of recent studies on the modification of nanocrystalline network semiconductor electrode, the properties of nanocrystalline network semiconductor electrode/electrolyte interface and the kinetics of heterogeneous photoinduced charge separation in the electrode/electrolyte interface are summarized.
本文对 Graetzel型 PEC中纳米晶半导体电极的表面修饰 ,纳米晶网络半导体电极 /溶液界面及界面电荷转移动力学特性方面的研究进行了综述 ,介绍了 Graetzel型PEC的结构组成及工作原理并对今后研究工作的重点提出一些建议。
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条