1) MOS structure dose detector
MOS结构剂量探测器
1.
We presente the principle of MOS structure dose detector, reviewe the development and status in this area, and summarise the technique parameters of MOS structure detector, which is widely used in the regions of radiation dose mesurement and space environment monitoring and so on.
介绍了MOS结构剂量探测器的基本测量原理 ,回顾了国内外利用MOS结构作为剂量探测器的发展过程和研究现状 ,分析了MOS结构剂量探测器的主要性能指标以及其在核辐射剂量监测和空间环境监测等领域的应用前
3) double-detector configuration
双探测器结构
4) γ dose detector
γ剂量探测器
1.
This article briefly instrodues the radiation property (temperature effect and anti-environment property of a new radiation sensitive field effect transistor γ dose detector.
本文简要地介绍了一种新型辐射场效应晶体管γ剂量探测器的辐射性能、温度性能和抗环境等性能。
5) MOS Structure
MOS结构
1.
The influence of catalyzing metal thin films on MEMS ammonia-sensitive sensor with a MOS structure;
催化金属薄膜对MOS结构MEMS氨敏传感器性能的影响
2.
A model considering the ionizing radiation effects in MOS structure
MOS结构电离辐射效应模型研究
3.
For the sake of researching of radiation effect of MOS structure irradiated by electron,we adopted 0.
为了研究MOS结构的电子辐照效应,采取了能量为0。
6) MOS-only
纯MOS结构
1.
A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs.
提出了一种新的纯MOS结构的基准电压源,它利用pMOS和nMOS的阈值电压差来抵消工艺偏差,提高了基准的精度。
补充资料：MOS 结构
见金属-氧化物-半导体结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条