1) buried-channel MOS structure
埋沟MOS结构
1.
The distortion of the C-V characteristics of a SiC buried-channel MOS structure is presented.
隐埋沟道MOSFET中存在一个pn结,在沟道夹断以后,半导体表面耗尽区和pn结耗尽区连在一起,这时总的表面电容是半导体表面耗尽区电容和pn结电容的串联,使埋沟MOS结构的C-V特性发生畸变。
2) MOS Structure
MOS结构
1.
The influence of catalyzing metal thin films on MEMS ammonia-sensitive sensor with a MOS structure;
催化金属薄膜对MOS结构MEMS氨敏传感器性能的影响
2.
A model considering the ionizing radiation effects in MOS structure
MOS结构电离辐射效应模型研究
3.
For the sake of researching of radiation effect of MOS structure irradiated by electron,we adopted 0.
为了研究MOS结构的电子辐照效应,采取了能量为0。
3) MOS-only
纯MOS结构
1.
A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs.
提出了一种新的纯MOS结构的基准电压源,它利用pMOS和nMOS的阈值电压差来抵消工艺偏差,提高了基准的精度。
4) SiC MOS structure
SiC MOS结构
1.
The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment.
对SiC MOS结构辐照引起的电参数退化及其电特性进行了研究。
5) MOS-HBT cascode
MOS-HBT结构
6) mos wafer
mos结构薄片
补充资料：MOS 结构
见金属-氧化物-半导体结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条