Covalently tethered hydrophilic polymer brushes on oriented single crystal silicon surface via ATRP(Ⅰ);

Silicon surface is first oxidized with H2SO4:H2O2,and then etched with HF:C2H5OH.

To Si surface and hydroxylate silicon surface,it became bigger.

In order to further reveal the whole diffusion characters and distribution behaviors of Ga impurity in SiO2/Si system, the changeable concentration laws of Ga impurity at puny region of the nearby Si surface, under different temperatures and different atmosphere in invariable resource diffusion, finite resource diffusion and re-oxygenation process are investigated by SRP.

TheGFAAS results indicate that Cu contamination on silicon surface can be reduced remarkably whenadding chelating agent, which could not only react with cupric ion in solution but also compete withit on adsorption of silicon wafer surface.