1) hydrogen-induced platelet
氢致缺陷
4) H defect
氢缺陷
1.
Electron-or hole-assisted reactions of H defects in KH_2PO_4;
KH_2PO_4中电子或空穴辅助下的氢缺陷反应
5) thermally induced microdefect
热致微缺陷
1.
After low-high temperature(800 ℃/4～16 h+1 100 ℃/16 h) two-step annealing,it is found that the density of thermally induced microdefects as well as BMDs(bulk micro defects) in heavily boron doped wafers is much higher than that in conventional wafers.
研究了重掺B对300 mm直拉Si衬底中热致微缺陷的影响。
6) consistent mode imperfection method
一致缺陷模态法
1.
A theoretical analysis on the advantages and disadvantages of consistent mode imperfection method and stochastic imperfection method is carried out.
对一致缺陷模态法和随机缺陷法的优缺点进行理论分析,提出了改进随机缺陷法,它弥补了随机缺陷法人工计算量大的缺点,也回答了设计临界荷载和一致缺陷模态法得到的临界荷载的可靠性问题。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条