1) Gate
隧道击穿
1.
Simulation of High-k Gate MOSFET Using PISCES-Ⅱ;
使用high-k材料做栅绝缘层,是减小MOS器件栅绝缘层直接隧道击穿(DirectTunneling,DT)电流的有效方法。
2) Tunnel
隧道
1.
Research on Diffusion Model of PM_(10) Concentration for Highway Tunnel;
公路隧道可吸入颗粒物扩散模型研究
2.
Synthesis and crystal structure of a novel two-dimensional molybdenum phosphate with tunnels;
一种新颖的含有隧道结构的二维钠钼磷多酸盐的合成和晶体结构
3.
The numerical simulation of hazardous materials leakage and dispersion process in a tunnel;
隧道内危险性介质泄漏扩散的数值模拟
3) channel
隧道
1.
Effects of creating channel and stripe by solidified fiber for fabricating porous bioceramics;
固化纤维在多孔生物陶瓷内的隧道条纹效应
2.
The comprehensive geological prospecting of the Chalinding channel project;
茶林顶隧道工程地质综合勘察
3.
Simulating influence of soft rock on channel structure by using finite element method;
用有限元模拟软岩蠕变对隧道结构的影响
4) tunnels
隧道
1.
Modelling fire size and spread in tunnels;
隧道内火灾大小和火灾蔓延模拟研究(英文)
2.
Survey and control in estuaries and tunnels construction;
河口隧道施工测量与控制
3.
Study on land subsidence of neighborhood tunnels excavation;
超小间距隧道施工中的地表沉降研究
5) tunnelling
隧道
1.
In this paper,the constructing、technology and safety measures for class Ⅱ/Ⅲ soft and crushed rockmass are described in Inzuiyan tunnelling,which is valuable referece to the similar excavating works.
主要介绍了鹰嘴岩隧道进口洞身在Ⅱ、Ⅲ类软弱破碎岩体段开挖的施工技术,以及监控量测、安全措施等,取得了显著成效,保证了施工进度与安全,在类似工程中具有参考价值。
2.
Advances in tunnelling and underground engineering in China are briefly described, and the construction methods and auxiliary processes employed in tunnelling and underground engineering are introduced with some key problems to which attention should be paid during construction.
简述了我国隧道及地下工程的发展，介绍了当前隧道及地下工程的施工方法、辅助工法，并提出了施工中应注意的有关重要问
6) Tunneling
隧道
1.
Application of earthquake refracted wave method to geologyical prediction for tunneling;
地震反射波法技术及其在隧道超前地质预报中的应用研究
2.
Study of virtual private network based on layer two tunneling protocol;
基于二层隧道协议的虚拟专用网研究
3.
IPv6 Network by Combining Tunneling and NAT-PT;
基于隧道技术和NAT-PT结合的IPv6网络
参考词条
补充资料：隧道击穿（tunnelbreakdown）
隧道击穿（tunnelbreakdown）
隧道击穿是在强电场下，由于隧道效应使大量电子从价带穿过禁带而进入导带所引起的一种击穿。因为最初是由齐纳（Zener）提出的，故又称齐纳击穿。当pn结的反向电压比较大时，势垒区能带发生倾斜，甚至可以使n区的导带底比p区的价带顶还低，使p区价带的电子有可以隧道穿过势垒到达n区导带中去，使反向电流急剧增大，发生隧道击穿。对于掺杂浓度比较高的情况下，势垒区薄，往往易发生隧道击穿。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。