1.
passivated ion-implanted planar silicon detector
离子注入型半导体硅探测器
2.
Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T6616-1995半导体硅片电阻率及硅薄膜薄层电阻测定非接触涡流法
3.
MAOS (Metal-Alumina-Oxide-Silicon- Semiconductor)
金属氧化铝硅半导体
4.
sos complementary metal oxide semiconductor
蓝宝石上硅互补金属氧化物半导体
5.
floating gate silicon process
浮栅硅金属氧化物半导体工艺
6.
MOSSOS (Metal-Oxide-Semiconductor Silicon On- Sapphire)
采用蓝宝石硅的金属-氧化物半导体
7.
Fine aluminum-1% silicon wire for semiconductor lend-bonding
GB/T8646-1998半导体键合铝--1%硅细丝
8.
gold silicon junction semiconductor detector
金－硅面垒型半导体探测器
9.
double level polysilicon mos structure
双层多晶硅金属氧化物半导体结构
10.
double poly process
双层多晶硅栅金属氧化物半导体工艺
11.
silicon gate mos process
硅栅金属氧化物半导体工艺
12.
polycrystalline silicon gate mos
多晶硅栅金属氧化物半导体
13.
poly squared cmos
双层多晶硅互补金属氧化物半导体
14.
isolated silicon gate cmos
绝缘硅栅互补金属氧化物半导体
15.
silicon gate complementary MOS
硅栅互补金属氧化物半导体
16.
Reverse conducting tetrode thyristor; semiconductor controlled rectifier.
反向导通四极型可控硅、半导体控制整流器。
17.
Photoluminescence Enhancement of Silicon-based Semiconductor Materials by Coupling with Metal Surface Plasmon
金属表面等离子体增强硅基半导体材料发光
18.
Elements are manufactured of green silicon carbide that is classed as an excess electron type semiconductor.
这种硅碳棒由一种新型的碳化硅制成，被归类为超级半导体。