1) density of localized trapped charge
局域态电荷密度
1.
Based on an advanced distribution model of gap states in a-Si: H, a model for the density of localized trapped charge is developed considering defect and tail localized states simultaneously.
本文发展了一种简明的氢化非晶硅（a－Si：H）局域态电荷密度统一模型。
2) local electronic density of state
局域电子态密度
3) local density of states
局域态密度
1.
The distribution of local density of states(LDOS) in quasiperiodic photonic crystal(QPC) and the total density of states(DOS) are studied.
本文研究了准晶光子晶体的局域态密度和全态密度。
2.
the density of states and local density of states of the two-dimensional photonic crystal composed of air cylinders on square lattice are in.
其中最重要的因素是态密度和局域态密度的性质。
3.
The contents include the following sections:(1)Photonic band gap (PBG) structures of two-dimensional magnetic photonic crystals (MPCs) in square lattice;(2)Guide modes in MPCs heterostructures in two-dimensional square lattices;(3)The density of states and local density of states of two-dimensional photonic crystals composed of circular cylinders in square lattice.
本文主要研究了光子晶体的性质，由三部分内容组成，分别为：磁性光子晶体的带隙结构；磁性光子晶体的界面传导模；光子晶体的态密度与局域态密度。
4) local state density of surface
表面局域态密度
5) local density of state(LDOS)
局域态密度(LDOS)
6) local electronic density
局域电子密度
补充资料：超导电性的局域和非局域理论（localizedandnon-localizedtheoriesofsuperconductivity）
超导电性的局域和非局域理论（localizedandnon-localizedtheoriesofsuperconductivity）
伦敦第二个方程（见“伦敦规范”）表明，在伦敦理论中实际上假定了js(r)是正比于同一位置r的矢势A(r)，而与其他位置的A无牵连；换言之，局域的A(r)可确定该局域的js(r)，反之亦然，即理论具有局域性，所以伦敦理论是一种超导电性的局域理论。若r周围r'位置的A(r')与j(r)有牵连而影响j(r)的改变，则A(r)就为非局域性质的。由于`\nabla\timesbb{A}=\mu_0bb{H}`，所以也可以说磁场强度H是非局域性的。为此，超导电性需由非局域性理论来描绘，称超导电性的非局域理论。皮帕德非局域理论就是典型的超导电性非局域唯象理论。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条