Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.

To research the effect of chair distance of high-speed train on occupant injury,referring to the interior establishment and configurations of Chinese train,the second impact model on occupant injury in high-speed train crash accidents is established based on the European train standards on occupant injury simulation,experimentation and evaluation.

Based on the interior arrangement of railway vehicle in China and the simulation through modeling of Madymo Hybrid Ⅲ 50% Dummy,the occupant injury caused by the second impact of railway crash is analyzed and compared with European and American standards.

Photon absorption of conduction band electronsand impact ionization under irradiation of few-cycle ultrashort laser pulses;

A quantitative model based on impact ionization is presented.

This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SHBTs.

It is concluded that the surface charge characteristic under nanosecond pulse is influenced by the charge injection,the secondary electron emission and the collision ionization and so on.