RIM-FODS (reflective intensity-modulated fiber optic displacement sensor) has simple structure, low construction cost, agile design, mal-condition working characteristic and extensive application, so it plays a very important part in fiber optic sensors.

To obtain rapidness in batch measuring of aperture,a system of electronic plug gauge, based on RIM-FODS, was put forward.

In this paper,a reflective intensity modulation optical fiber sensor with simple structure and easy design has been introduced.

Photoluminescence (PL) and photoreflectance (PR) spectra of GaInNAs/GaAs multiple quantum wells (MQWs) grown on GaAs substrate by MBE are measured over a range of temperature and excitation power density.

The experimental results in GaAs/AlGaAs and strained InGaAs/GaAs multiple quantum wells by using DR technique at room temperature were presented, and compared with the experimental results of photoreflectance (PR) spectra and the theoretical values.

The photoluminescence, photoreflectance and Raman spectra of ZnTe/Zn 1 x Mn x Te superlattice samples grown by MBE technique were studied from 11 to 80K.